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IRF3205S-JSM
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JSMSEMI MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRF3205S-JSM
JSMSEMI · MOSFETs · TO-263
IRF3205S-JSM from JSMSEMI, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 2.0 V min to 4.0 V max at ID=250µA. |
| 2 | D | passive | Drain (also the tab); drain-source voltage 55 V min breakdown, continuous drain current 110 A at TC=25℃, pulsed 390 A. |
| 3 | S | passive | Source; RDS(on) max 8 mΩ at VGS=10V, ID=62A, and body diode forward voltage max 1.3 V at IS=62A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 55 | V | VGS= 0; ID= 250µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS= VGS; ID=250µA | 2 | |
| Drain-Source On-Resistance | RDS(on) | 8 | mΩ | VGS= 10V; ID=62A | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS= ±20V;VDS= 0 | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | µA | VDS=55V; VGS= 0 | 2 | ||
| Diode Forward On-Voltage | VSD | 1.3 | V | IS=62A ;VGS= 0 | 2 | ||
| Drain-Source Voltage | VDSS | 55 | V | VGS=0, TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Drain Current-continuous | ID | 110 | A | TC=25℃ | 1 | ||
| Pulse Drain Current | IDM | 390 | A | TC=25℃ | 1 | ||
| Total Dissipation | Ptot | 200 | W | TC=25℃ | 1 | ||
| Max. Operating Junction Temperature | Tj | 175 | ℃ | TC=25℃ | 1 | ||
| Storage Temperature Range | Tstg | -55 | 175 | ℃ | TC=25℃ | 1 | |
| Thermal Resistance, Junction to Case | Rth j-c | 0.75 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
IRF3205S-JSM - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
irf3205s-jsm-etched.step/irf3205s-jsm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf3205s-jsm.step/irf3205s-jsm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (2 pp, sha256
05d62618aa0dd9d3, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRF3205S-JSM
**JSMSEMI** · MOSFETs · TO-263
IRF3205S-JSM from JSMSEMI, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 2.0 V min to 4.0 V max at ID=250µA. |
| 2 | D | passive | Drain (also the tab); drain-source voltage 55 V min breakdown, continuous drain current 110 A at TC=25℃, pulsed 390 A. |
| 3 | S | passive | Source; RDS(on) max 8 mΩ at VGS=10V, ID=62A, and body diode forward voltage max 1.3 V at IS=62A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 55 | | | V | VGS= 0; ID= 250µA | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS= VGS; ID=250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | | | 8 | mΩ | VGS= 10V; ID=62A | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS= ±20V;VDS= 0 | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 25 | µA | VDS=55V; VGS= 0 | 2 |
| Diode Forward On-Voltage | VSD | | | 1.3 | V | IS=62A ;VGS= 0 | 2 |
| Drain-Source Voltage | VDSS | | | 55 | V | VGS=0, TC=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC=25℃ | 1 |
| Drain Current-continuous | ID | | | 110 | A | TC=25℃ | 1 |
| Pulse Drain Current | IDM | | | 390 | A | TC=25℃ | 1 |
| Total Dissipation | Ptot | | | 200 | W | TC=25℃ | 1 |
| Max. Operating Junction Temperature | Tj | | | 175 | ℃ | TC=25℃ | 1 |
| Storage Temperature Range | Tstg | -55 | | 175 | ℃ | TC=25℃ | 1 |
| Thermal Resistance, Junction to Case | Rth j-c | | | 0.75 | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `IRF3205S-JSM`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `irf3205s-jsm-etched.step` / `irf3205s-jsm-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf3205s-jsm.step` / `irf3205s-jsm.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [JSMSEMI datasheet](docs/irf3205s-jsm-datasheet.pdf) (2 pp, sha256 `05d62618aa0dd9d3`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irf3205s-jsm-datasheet.pdf)