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IRF3205PBF-ES

Public Made by Adom

by adom

ElecSuper MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF3205PBF-ES

ElecSuper · MOSFETs · TO-252

IRF3205PBF-ES from ElecSuper, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; the gate-source voltage is limited to ±20 V (VGS), and RDS(on) is specified at VGS=10 V and 4.5 V.
2 Drain passive Drain terminal; the device is rated for 60 V drain-source voltage (BVDSS) and 58 A continuous drain current at TC=25°C (38 A at TC=100°C).
3 Source passive Source terminal; the datasheet gives no source-specific limit, and the body diode forward voltage VSD is 1.5 V at IS=30 A.

Key specifications

Parameter Value
Manufacturer ElecSuper
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS 60 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 58 A TC=25°C 2
Continuous Drain Current ID 38 A TC=100°C 2
Maximum Power Dissipation PD 70 W 2
Pulsed Drain Current IDM 232 A 2
Single Pulsed Avalanche Current IAS 20 A Note 1: TJ=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω, IAS=20A 2
Single Pulsed Avalanche Energy EAS 100 mJ Note 1: TJ=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω, IAS=20A 2
Operating Junction Temperature TJ 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Drain-to-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS=60V, VGS=0V 3
Gate-to-source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(TH) 1 1.7 2.5 V VGS=VDS, ID=250uA 3
Drain-to-source On-resistance RDS(on) 7.5 10 mΩ VGS=10V, ID=30A 3
Drain-to-source On-resistance RDS(on) 10 14 mΩ VGS=4.5V, ID=20A 3
Forward transconductance gfs 40 S VDS=5V, ID=10A 3
Input Capacitance CISS 4020 pF VGS=0V, f=1MHz, VDS=25V 3
Output Capacitance COSS 210 pF VGS=0V, f=1MHz, VDS=25V 3
Reverse Transfer Capacitance CRSS 115 pF VGS=0V, f=1MHz, VDS=25V 3
Total Gate Charge QG(TOT) 78 nC VGS=10V, VDS=30V, ID=30A 3
Gate-to-Source Charge QGS 15 nC VGS=10V, VDS=30V, ID=30A 3
Gate-to-Drain Charge QGD 15 nC VGS=10V, VDS=30V, ID=30A 3
Turn-On Delay Time td(ON) 13 ns VGS=10V, VDS=30V, ID=30A, RG=1.8Ω 3
Rise Time tr 77 ns VGS=10V, VDS=30V, ID=30A, RG=1.8Ω 3
Turn-Off Delay Time td(OFF) 50 ns VGS=10V, VDS=30V, ID=30A, RG=1.8Ω 3
Fall Time tf 105 ns VGS=10V, VDS=30V, ID=30A, RG=1.8Ω 3
Forward Voltage VSD 1.5 V VGS=0V, IS=30A 3
Junction-to-Case Thermal Resistance RθJC 2.14 °C/W Single operation 2

CAD (KiCad official)

  • Symbol: IRF3205PBF-ES
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: irf3205pbf-es-etched.step / irf3205pbf-es-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf3205pbf-es.step / irf3205pbf-es.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ElecSuper datasheet (7 pp, sha256 d906a1e6fdcef3ca, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF