# IRF2807PBF

**Infineon Technologies** · MOSFETs · TO-220AB

IRF2807PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the HEXFET MOSFET, with VGS limited to ±20 V gate-to-source voltage. |
| 2 | D | passive | Drain of the HEXFET MOSFET, rated for V(BR)DSS of 75 V and continuous drain current of 82 A (silicon limited) or 75 A (package limited) at TC = 25°C. |
| 3 | S | passive | Source of the HEXFET MOSFET, which is the reference for VGS and carries the integral body diode, with diode forward voltage of 1.2 V max at IS = 43 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `IRF2807PBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irf2807pbf-etched.step` / `irf2807pbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf2807pbf.step` / `irf2807pbf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588887159557906432) (11 pp, sha256 `16412a6c5965a860`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irf2807pbf-datasheet.pdf)