# IRF1407PBF-HXY

**HXY MOSFET** · MOSFETs · TO-220

IRF1407PBF-HXY from HXY MOSFET, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±20 V (absolute maximum), and RDS(ON) is specified at VGS = 10 V. |
| 2 | D | passive | Drain terminal; the datasheet rates the drain-source voltage at 120 V and the continuous drain current at 120 A (TC = 25 °C). |
| 3 | S | passive | Source terminal, the reference for the gate-source voltage rated at ±20 V; the body diode forward current is rated at 120 A at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 120 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 120 | A | TC=25℃ | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 326 | mJ |  | 1 |
| Total Power Dissipation | PD |  |  | 119 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Pulsed Drain Current | IDM |  |  | 320 | A |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 52 | ℃/W |  | 1 |
| Thermal Resistance (printed as Junction-Ambient) | RθJC |  |  | 1 | ℃/W |  | 1 |
| Drain to Source Breakdown Voltage | VDSS | 120 |  |  | V | VGS=0V, ID=250µA | 2 |
| Drain to Source Leakage Current | IDSS |  |  | 1 | µA | VDS = 120V, VGS= 0V | 2 |
| Gate to Source Forward Leakage | IGSS(F) |  |  | 100 | nA | VGS =+20V | 2 |
| Gate to Source Reverse Leakage | IGSS(R) |  |  | -100 | nA | VGS =-20V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2.5 | 3 | 3.5 | V | VDS=VGS, ID = 250µA | 2 |
| Drain-to-Source On-Resistance | RDS(ON) |  | 6 | 7.5 | mΩ | VGS=10V, ID=20A | 2 |
| Diode Forward Current | IS |  |  | 120 | A | TC =25 °C | 2 |
| Diode Forward Voltage | VSD |  | 0.83 | 1.2 | V | IS=20A, VGS=0V | 2 |

## CAD (KiCad official)

- Symbol: `IRF1407PBF-HXY`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `irf1407pbf-hxy-etched.step` / `irf1407pbf-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irf1407pbf-hxy.step` / `irf1407pbf-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758126564104257536) (6 pp, sha256 `21db96ba0fd8e7c3`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irf1407pbf-hxy-datasheet.pdf)