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IRF100S201-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF100S201-HXY
HXY MOSFET · MOSFETs · TO-263
IRF100S201-HXY from HXY MOSFET, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel SGT MOSFET, with absolute maximum VGS of ±20 V and VGS(th) of 2 to 4 V at ID = 250 µA. |
| 2 | D | passive | Drain of the MOSFET, rated for VDS of 100 V and continuous ID of 260 A at TC=25°C (pulsed IDM 1028 A). |
| 3 | S | passive | Source of the MOSFET, with continuous body-diode source current IS of 260 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 260 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 163 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 1028 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 583 | mJ | VDD=50V, VGS=10V, L=0.4mH, IAS=54A | 1 | ||
| Total Power Dissipation | PD | 379 | W | TC=25°C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 59 | °C/W | 1 | |||
| Thermal Resistance Junction-to-Case | RθJC | 0.33 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate-body Leakage current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS =100V, VGS = 0V, TJ=25°C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS =100V, VGS = 0V, TJ=100°C | 2 | ||
| Gate-Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source on-Resistance | RDS(on) | 4.2 | mΩ | VGS = 10V, ID = 20A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | ID = 20A, VGS = 0V | 2 | ||
| Continuous Source Current | IS | 260 | A | TC=25°C | 2 | ||
| Forward Transconductance | gfs | 76 | S | VDS=10V, ID=20A | 2 | ||
| Input Capacitance | Ciss | 9030 | pF | VDS = 50V, VGS =0V, f =1MHz | 2 | ||
| Output Capacitance | Coss | 1505 | pF | VDS = 50V, VGS =0V, f =1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 40 | pF | VDS = 50V, VGS =0V, f =1MHz | 2 | ||
| Gate Resistance | Rg | 2.3 | Ω | f =1MHz | 2 | ||
| Total Gate Charge | Qg | 150 | nC | VGS = 10V, VDS = 50V, ID=20A | 2 | ||
| Gate-Source Charge | Qgs | 32.5 | nC | VGS = 10V, VDS = 50V, ID=20A | 2 | ||
| Gate-Drain Charge | Qgd | 49 | nC | VGS = 10V, VDS = 50V, ID=20A | 2 | ||
| Turn-on Delay Time | td(on) | 27 | ns | VGS =10V, VDD =50V, RG = 3Ω, ID= 20A | 2 | ||
| Rise Time | tr | 78.5 | ns | VGS =10V, VDD =50V, RG = 3Ω, ID= 20A | 2 | ||
| Turn-off Delay Time | td(off) | 110 | ns | VGS =10V, VDD =50V, RG = 3Ω, ID= 20A | 2 | ||
| Fall Time | tf | 86 | ns | VGS =10V, VDD =50V, RG = 3Ω, ID= 20A | 2 | ||
| Body Diode Reverse Recovery Time | trr | 88 | ns | IF = 20A, dI/dt=100A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 220 | nC | IF = 20A, dI/dt=100A/µs | 2 |
CAD (KiCad official)
- Symbol:
IRF100S201-HXY - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
irf100s201-hxy-etched.step/irf100s201-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf100s201-hxy.step/irf100s201-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
e7f38c7ae677200d, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).