component
IRF100P218
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF100P218
Infineon Technologies · MOSFETs · TO-247-3
IRF100P218 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; the gate-source voltage VGS is rated from -20 V to 20 V. |
| 2 | Drain | passive | Drain terminal of the MOSFET; continuous drain current is rated at 209 A (package limited) and 483 A (silicon limited) at TC=25°C. |
| 3 | Source | passive | Source terminal of the MOSFET and reference for the gate-source voltage VGS. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current (VGS=10V, TC=25°C) | ID | 209 | A | VGS=10V,TC=25°C | 3 | ||
| Continuous drain current (silicon limited) | ID | 483 | A | VGS=10V,TC=25°C (silicon limited) | 3 | ||
| Continuous drain current (silicon limited, TC=100°C) | ID | 341 | A | VGS=10V,TC=100°C (silicon limited) | 3 | ||
| Pulsed drain current | ID,pulse | 836 | A | TC=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 1050 | mJ | ID=100A,RGS=50Ω | 3 | ||
| Gate source voltage | VGS | -20 | 20 | V | 3 | ||
| Power dissipation (TC=25°C) | Ptot | 556 | W | TC=25°C | 3 | ||
| Power dissipation (TA=25°C) | Ptot | 3.8 | W | TA=25°C,RTHJA=40°C/W | 3 | ||
| Operating and storage temperature | Tj,Tstg | -55 | 175 | °C | IEC climatic category; DIN IEC 68-1: 55/175/56 | 3 | |
| Thermal resistance, junction-case | RthJC | 0.27 | °C/W | 3 | |||
| Thermal resistance, junction-ambient | RthJA | 40 | °C/W | 3 | |||
| Thermal resistance, case-to-sink, flat greased surface | RthCS | 0.24 | °C/W | 3 | |||
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V,ID=1mA | 4 | ||
| Gate threshold voltage | VGS(th) | 2.2 | 3.8 | V | VDS=VGS,ID=278µA | 4 | |
| Zero gate voltage drain current (Tj=25°C) | IDSS | 5 | µA | VDS=100V,VGS=0V,Tj=25°C | 4 | ||
| Zero gate voltage drain current (Tj=125°C) | IDSS | 100 | µA | VDS=100V,VGS=0V,Tj=125°C | 4 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V,VDS=0V | 4 | ||
| Drain-source on-state resistance (VGS=10V) | RDS(on) | 1.1 | 1.28 | mΩ | VGS=10V,ID=100A | 4 | |
| Drain-source on-state resistance (VGS=6V) | RDS(on) | 1.3 | 1.5 | mΩ | VGS=6V,ID=50A | 4 | |
| Gate charge total | Qg | 330 | 412 | nC | VDD=50V,ID=100A,VGS=0to10V | 5 | |
| Diode continuous forward current | IS | 209 | A | TC=25°C | 5 | ||
| Diode pulse current | IS,pulse | 836 | A | TC=25°C | 5 | ||
| Diode forward voltage | VSD | 1.2 | V | VGS=0V,IF=100A,Tj=25°C | 5 |
CAD (KiCad official)
- Symbol:
IRF100P218 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
irf100p218-etched.step/irf100p218-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf100p218.step/irf100p218.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (11 pp, sha256
ccdac6e5b1222893, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).