component
IRF100B202
Public Made by Adomby adom
Infineon Technologies MOSFETs, ITO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF100B202
Infineon Technologies · MOSFETs · ITO-220AB-3
IRF100B202 from Infineon Technologies, in a ITO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, rated for VGS of ±20 V maximum with a gate threshold voltage of 2.0 V to 4.0 V at ID = 150µA. |
| 2 | D | passive | Drain, rated for 100 V VDSS, 97 A continuous drain current at TC = 25°C and 380 A pulsed drain current. |
| 3 | S | passive | Source, with body diode rated for 97 A continuous source current, 380 A pulsed, and 1.3 V maximum forward voltage at IS = 58 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | ITO-220AB-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 7.2 | 8.6 | mΩ | VGS = 10V, ID = 58A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 150µA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 20 | µA | VDS =100 V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current (125°C) | IDSS | 250 | µA | VDS = 80V,VGS = 0V,TJ =125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 123 | S | VDS = 10V, ID =58A | 3 | ||
| Total Gate Charge | Qg | 77 | 116 | nC | ID = 58A, VDS = 50V, VGS = 10V | 3 | |
| Continuous Source Current (Body Diode) | IS | 97 | A | MOSFET symbol showing the integral reverse p-n junction diode | 3 | ||
| Pulsed Source Current (Body Diode) | ISM | 380 | A | MOSFET symbol showing the integral reverse p-n junction diode | 3 | ||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C,IS = 58A,VGS = 0V | 3 | ||
| Junction-to-Case Thermal Resistance | RθJC | 0.68 | °C/W | 2 | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 62 | °C/W | 2 | |||
| Case-to-Sink Thermal Resistance | RθCS | 0.5 | °C/W | Flat Greased Surface | 2 | ||
| Continuous Drain Current | ID | 97 | A | TC = 25°C, VGS @ 10V | 2 | ||
| Continuous Drain Current | ID | 68 | A | TC = 100°C, VGS @ 10V | 2 | ||
| Pulsed Drain Current | IDM | 380 | A | 2 | |||
| Maximum Power Dissipation | PD | 221 | W | TC = 25°C | 2 | ||
| Linear Derating Factor | 1.5 | W/°C | 2 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 2 | ||
| Soldering Temperature | 300 | °C | for 10 seconds (1.6mm from case) | 2 | |||
| Single Pulse Avalanche Energy (Thermally limited) | EAS | 189 | mJ | Thermally limited, starting TJ = 25°C, L = 0.113mH, RG = 50, IAS = 58A, VGS =10V | 2 | ||
| Single Pulse Avalanche Energy (Thermally limited) | EAS | 292 | mJ | Thermally limited, starting TJ = 25°C, L = 1.0mH, RG = 50, IAS = 24A, VGS =10V | 2 | ||
| Single Pulse Avalanche Energy Tested Value | EAS (tested) | 217 | mJ | starting TJ =25°C, L= 0.113mH, RG = 50, IAS =58A, VGS =10V | 2 | ||
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | 0.1 | V/°C | Reference to 25°C, ID = 5mA | 2 | ||
| Gate Resistance | RG | 2.4 | Ω | 2 | |||
| Gate-to-Source Charge | Qgs | 20 | nC | ID = 58A, VDS = 50V, VGS = 10V | 3 | ||
| Gate-to-Drain Charge | Qgd | 23 | nC | ID = 58A, VDS = 50V, VGS = 10V | 3 | ||
| Turn-On Delay Time | td(on) | 11 | ns | VDD = 65V, ID = 58A, RG= 2.7Ω, VGS = 10V | 3 | ||
| Rise Time | tr | 56 | ns | VDD = 65V, ID = 58A, RG= 2.7Ω, VGS = 10V | 3 | ||
| Turn-Off Delay Time | td(off) | 55 | ns | VDD = 65V, ID = 58A, RG= 2.7Ω, VGS = 10V | 3 | ||
| Fall Time | tf | 58 | ns | VDD = 65V, ID = 58A, RG= 2.7Ω, VGS = 10V | 3 | ||
| Input Capacitance | Ciss | 4476 | pF | VGS = 0V, VDS = 50V, ƒ = 1.0MHz | 3 | ||
| Output Capacitance | Coss | 319 | pF | VGS = 0V, VDS = 50V, ƒ = 1.0MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 154 | pF | VGS = 0V, VDS = 50V, ƒ = 1.0MHz | 3 | ||
| Reverse Recovery Time | trr | 51 | ns | TJ = 25°C, VDD = 85V, IF = 58A, di/dt = 100A/µs | 3 |
CAD (KiCad official)
- Symbol:
IRF100B202 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: ITO-220AB-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (11 pp, sha256
057070780f3d59aa, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).