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IR2184SPBF

Infineon Technologies · Gate Drive ICs · SOIC-8

IR2184SPBF from Infineon Technologies, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 IN input Logic input for the high and low side gate driver outputs (HO and LO), in phase with HO and referenced to COM, with VIH min 2.7 V and VIL max 0.8 V over VCC 10 V to 20 V and an internal 5.2 V zener clamp.
2 SD input Logic shutdown input referenced to COM, with positive-going threshold min 2.7 V and negative-going threshold max 0.8 V, and an internal 5.2 V zener clamp.
3 COM power_in Low side return and reference for the logic inputs and the LO/HO output voltages; all absolute voltage ratings are referenced to COM.
4 LO output Low side gate drive output, operating between 0 V and VCC, with 1.4 A source / 1.8 A sink output current capability.
5 VCC power_in Low side and logic fixed supply, recommended range 10 V to 20 V with an absolute maximum of 25 V (undervoltage lockout applies).
6 VS power_in High side floating supply return, rated for offset of up to 600 V (recommended) with dVS/dt transients limited to 50 V/ns.
7 HO output High side gate drive output, operating between VS and VB, in phase with the IN input.
8 VB power_in High side floating supply, recommended VS + 10 V to VS + 20 V with an absolute maximum of 625 V, supplying the high side driver through a bootstrap circuit.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOIC-8
Category Power Management ICs
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
High side floating absolute voltage VB -0.3 625 V 2
Low side and logic fixed supply voltage VCC -0.3 25 V 2
Low side output voltage VLO -0.3 V 2
Allowable offset supply voltage transient dVS/dt 50 V/ns 2
Package power dissipation (8-lead SOIC) PD 0.625 W TA ≤ +25°C 2
Thermal resistance, junction to ambient (8-lead SOIC) RthJA 200 °C/W 2
Junction temperature TJ 150 °C 2
Storage temperature TS -50 150 °C 2
Lead temperature (soldering) TL 300 °C soldering, 10 seconds 2
High side floating supply offset voltage VS 600 V Note 1: logic operational for VS of -5 to +600V 2
Low side and logic fixed supply voltage VCC 10 20 V 2
Low side output voltage VLO 0 V 2
Ambient temperature TA -40 125 °C 2
Turn-on propagation delay ton 680 900 ns VS = 0V 3
Turn-off propagation delay toff 270 400 ns VS = 0V or 600V 3
Shut-down propagation delay tsd 180 270 ns 3
Delay matching, HS & LS turn-on MTon 0 90 ns 3
Delay matching, HS & LS turn-off MToff 0 40 ns 3
Turn-on rise time tr 40 60 ns VS = 0V 3
Turn-off fall time tf 20 35 ns VS = 0V 3
Deadtime: LO turn-off to HO turn-on (DTLO-HO) and HO turn-off to LO turn-on (DTHO-LO) DT 280 400 520 ns RDT = 0 3
Deadtime matching = DTLO-HO - DTHO-LO MDT 0 50 ns RDT = 0 3
Deadtime matching = DTLO-HO - DTHO-LO MDT 0 600 ns RDT = 200k 3
Logic 1 input voltage for HO & logic 0 for LO VIH 2.7 V VCC = 10V to 20V 3
Logic 0 input voltage for HO & logic 1 for LO VIL 0.8 V VCC = 10V to 20V 3
SD input positive going threshold VSD,TH+ 2.7 V VCC = 10V to 20V 3
SD input negative going threshold VSD,TH- 0.8 V VCC = 10V to 20V 3
High level output voltage, VBIAS - VO VOH 1.2 V IO = 0A 3
Low level output voltage, VO VOL 0.1 V IO = 0A 3
Offset supply leakage current ILK 50 µA VB = VS = 600V 3
Quiescent VBS supply current IQBS 20 60 150 µA VIN = 0V or 5V 3
Quiescent VCC supply current IQCC 0.4 1 1.6 mA VIN = 0V or 5V 3
Logic 1 input bias current IIN+ 25 60 µA IN = 5V, SD = 0V 3
Logic 0 input bias current IIN- 1 µA IN = 0V, SD = 5V 3
VCC and VBS supply undervoltage positive going threshold VCCUV+ 8 8.9 9.8 V 3
VCC and VBS supply undervoltage negative going threshold VCCUV- 7.4 8.2 9 V 3
Undervoltage hysteresis (VCC) VCCUVH 0.3 0.7 V 3
Undervoltage hysteresis (VBS) VBSUVH 0.3 0.7 V 3
Output high short circuit pulsed current IO+ 1.4 1.9 A VO = 0V, PW ≤ 10 µs 3
Output low short circuit pulsed current IO- 1.8 2.3 A VO = 15V, PW ≤ 10 µs 3

CAD (KiCad official)

  • Symbol: IR2184SPBF
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ir2184spbf-etched.step / ir2184spbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ir2184spbf.step / ir2184spbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (24 pp, sha256 d5cd4452f90d35b1, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF