main
History Download
Ray Publish 0.1.0 42e0a9b 11d ago

IR2011STRPBF

Infineon Technologies · Gate Drive ICs · SOIC-8

IR2011STRPBF from Infineon Technologies, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VCC power_in Low side fixed supply, recommended 10V to 20V (absolute max 25V) with undervoltage lockout.
2 VB power_in High side floating supply, VS+10V to VS+20V recommended (absolute max 225V) with undervoltage lockout.
3 HO output High side gate drive output, swings from VS to VB with 1.0A typ source/sink pulsed current.
4 VS power_in High side floating supply return, operates up to 200V offset and tolerates negative transients.
5 HIN input Logic input for high side gate driver output HO, in phase, active high, 3.3V/5V compatible Schmitt trigger with pull-down.
6 LIN input Logic input for low side gate driver output LO, in phase, active high, 3.3V/5V compatible Schmitt trigger with pull-down.
7 COM power_in Low side return (ground reference for logic inputs and LO).
8 LO output Low side gate drive output, swings from COM to VCC with 1.0A typ source/sink pulsed current.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOIC-8
Category Power Management ICs
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
High side floating supply voltage VB -0.3 225 V 3
Low side fixed supply voltage VCC -0.3 25 V 3
Low side output voltage VLO -0.3 V 3
Logic input voltage (HIN, LIN) VIN -0.3 V 3
Allowable offset supply voltage transient dVs/dt 50 V/ns 3
Package power dissipation, 8-Lead SOIC PD 0.625 W TA ≤ +25°C 3
Junction temperature TJ 150 °C 3
Storage temperature TS -55 150 °C 3
Lead temperature (soldering) TL 300 °C soldering, 10 seconds 3
Thermal resistance, junction to ambient, 8-Lead SOIC RthJA 200 °C/W 8-Lead SOIC 3
High side floating supply offset voltage VS 200 V 3
Low side fixed supply voltage VCC 10 20 V 3
Low side output voltage VLO 0 V 3
Logic input voltage (HIN, LIN) VIN 5.5 V 3
Ambient temperature TA -40 125 °C 3
Turn-on rise time tr 35 50 ns 4
Turn-off fall time tf 20 35 ns 4
Turn-on delay matching DM1 20 ns 4
Turn-off delay matching DM2 20 ns 4
Logic '1' input voltage VIH 2.2 V VCC = 10V, 20V 4
Logic '0' input voltage VIL 0.7 V VCC = 10V, 20V 4
High level output voltage, VBIAS - VO VOH 2 V IO = 0A 4
Low level output voltage, VO VOL 0.2 V IO = 20mA 4
Offset supply leakage current ILK 50 μA VB = VS = 200V 4
Quiescent VBS supply current IQBS 90 210 VIN = 0V or 3.3V 4
Quiescent VCC supply current IQCC 140 230 4
Logic '1' input bias current IIN+ 7 20 VIN = 3.3V 4
Logic '0' input bias current IIN- 1 VIN = 0V 4
VBS supply undervoltage positive going threshold VBSUV+ 8.2 9 9.8 V 4
VBS supply undervoltage negative going threshold VBSUV- 7.4 8.2 9 V 4
VCC supply undervoltage positive going threshold VCCUV+ 8.2 9 9.8 V 4
VCC supply undervoltage negative going threshold VCCUV- 7.4 8.2 9 V 4

CAD (KiCad official)

  • Symbol: IR2011STRPBF
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ir2011strpbf-etched.step / ir2011strpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ir2011strpbf.step / ir2011strpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (18 pp, sha256 5bf2332a64542daf, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF