IPW65R125CFD7XKSA1 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Gate	input	Gate-source voltage is limited to -20 V to 20 V static and -30 V to 30 V dynamic (AC, f>1 Hz) according to the maximum ratings.
2	Drain	passive	Drain (also the tab) is rated for 650 V drain-source breakdown voltage and 19 A continuous drain current at TC=25°C.
3	Source	passive	Source is the return of the internal body diode, whose continuous forward current is limited to 19 A at TC=25°C.

Key specifications

Parameter	Value
Manufacturer	Infineon Technologies
Package	TO-247-3
Category	Triode/MOS Tube/Transistor
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Continuous drain current	ID			19	A	TC=25°C	3
Continuous drain current	ID			12	A	TC=100°C	3
Pulsed drain current	ID,pulse			72	A	TC=25°C	3
Avalanche energy, single pulse	EAS			85	mJ	ID=4.1A; VDD=50V; see table 10	3
Avalanche energy, repetitive	EAR			0.42	mJ	ID=4.1A; VDD=50V; see table 10	3
Avalanche current, single pulse	IAS			4.1	A		3
MOSFET dv/dt ruggedness	dv/dt			120	V/ns	VDS=0...400V	3
Gate source voltage (static)	VGS	-20		20	V	static	3
Gate source voltage (dynamic)	VGS	-30		30	V	AC (f>1 Hz)	3
Power dissipation	Ptot			98	W	TC=25°C	3
Storage temperature	Tstg	-55		150	°C		3
Operating junction temperature	Tj	-55		150	°C		3
Mounting torque				60	Ncm	M3 and M3.5 screws	3
Continuous diode forward current	IS			19	A	TC=25°C	3
Diode pulse current	IS,pulse			72	A	TC=25°C	3
Reverse diode dv/dt	dv/dt			70	V/ns	VDS=0...400V,ISD<=8.5A,Tj=25°C	3
Maximum diode commutation speed	diF/dt			1300	A/µs	VDS=0...400V,ISD<=8.5A,Tj=25°C	3
Thermal resistance, junction - case	RthJC			1.27	°C/W		4
Thermal resistance, junction - ambient	RthJA			62	°C/W	leaded	4
Soldering temperature, wavesoldering	Tsold			260	°C	1.6mm (0.063 in.) from case for 10s	4
Drain-source breakdown voltage	V(BR)DSS	650			V	VGS=0V,ID=1mA	5
Gate threshold voltage	V(GS)th	3.5	4	4.5	V	VDS=VGS,ID=0.42mA	5
Gate-source leakage current	IGSS			1000	nA	VGS=20V,VDS=0V	5
Drain-source on-state resistance	RDS(on)		0.1	0.125	Ω	VGS=10V,ID=8.5A,Tj=25°C	5
Drain-source on-state resistance	RDS(on)		0.222		Ω	VGS=10V,ID=8.5A,Tj=150°C	5
Reverse recovery time	trr		104	156	ns	VR=400V,IF=8.5A,diF/dt=100A/µs; see table 8	6
Reverse recovery charge	Qrr		0.52	1.04	µC	VR=400V,IF=8.5A,diF/dt=100A/µs; see table 8	6

CAD (KiCad official)

Symbol: IPW65R125CFD7XKSA1
Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
3D model: TO-247-3 (KiCad packages3D, STEP)
3D model files: ipw65r125cfd7xksa1-etched.step / ipw65r125cfd7xksa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipw65r125cfd7xksa1.step / ipw65r125cfd7xksa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Infineon Technologies datasheet (14 pp, sha256 f06162fc334ca487, retrieved 2026-11-02, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

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IPW65R125CFD7XKSA1

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3D Model

Symbol & Footprint

Schematic Symbol

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Datasheet

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