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IPW60R190P6

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Infineon Technologies MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPW60R190P6

Infineon Technologies · MOSFETs · TO-247

IPW60R190P6 from Infineon Technologies, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the MOSFET; the datasheet specifies a static gate-source voltage of -20 V to 20 V and a dynamic (AC, f>1 Hz) gate-source voltage of -30 V to 30 V.
2 Drain passive Drain of the MOSFET, connected to the tab; the device is rated for a drain-source breakdown voltage V(BR)DSS of 600 V minimum and VDS,max of 650 V at Tj,max.
3 Source passive Source of the MOSFET, used as the reference terminal for the gate-source voltage ratings.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 20.2 A TC=25°C 4
Continuous drain current ID 12.7 A TC=100°C 4
Pulsed drain current ID,pulse 57 A TC=25°C 4
Avalanche energy, single pulse EAS 419 mJ ID=3.5A; VDD=50V; see table 12 4
Avalanche energy, repetitive EAR 0.63 mJ ID=3.5A; VDD=50V; see table 12 4
Avalanche current, repetitive IAR 3.5 A 4
MOSFET dv/dt ruggedness dv/dt 100 V/ns VDS=0...400V 4
Gate source voltage (static) VGS -20 20 V static; 4
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 4
Power dissipation (Non FullPAK) TO-220, TO-263, TO-247 Ptot 151 W TC=25°C 4
Storage temperature Tstg -55 150 °C 4
Operating junction temperature Tj -55 150 °C 4
Mounting torque (Non FullPAK) TO-220, TO-247 60 Ncm M3 and M3.5 screws 4
Continuous diode forward current IS 17.5 A TC=25°C 4
Diode pulse current IS,pulse 57 A TC=25°C 4
Reverse diode dv/dt dv/dt 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C 4
Maximum diode commutation speed dif/dt 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C 4
Thermal resistance, junction - case RthJC 0.83 °C/W 5
Thermal resistance, junction - ambient RthJA 62 °C/W leaded 5
Soldering temperature, wavesoldering Tsold 260 °C 1.6mm (0.063 in.) from case for 10s 5
Drain-source breakdown voltage V(BR)DSS 600 V VGS=0V,ID=1mA 6
Gate threshold voltage V(GS)th 3.5 4 4.5 V VDS=VGS,ID=0.63mA 6
Zero gate voltage drain current IDSS 10 µA VDS=600,VGS=0V,Tj=25°C 6
Zero gate voltage drain current IDSS 1 µA VDS=600,VGS=0V,Tj=150°C 6
Gate-source leakage current IGSS 100 nA VGS=20V,VDS=0V 6
Drain-source on-state resistance RDS(on) 0.171 0.19 Ω VGS=10V,ID=7.6A,Tj=25°C 6
Drain-source on-state resistance RDS(on) 0.445 Ω VGS=10V,ID=7.6A,Tj=150°C 6
Gate resistance RG 3.4 Ω f=1MHz,opendrain 6

CAD (KiCad official)

  • Symbol: IPW60R190P6
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: ipw60r190p6-etched.step / ipw60r190p6-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipw60r190p6.step / ipw60r190p6.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (19 pp, sha256 b25c43ad41bc4ee2, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF