component
IPW60R180P7
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPW60R180P7
Infineon Technologies · MOSFETs · TO-247-3
IPW60R180P7 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; the datasheet limits gate-source voltage to ±20 V static and ±30 V dynamic (AC, f>1 Hz). |
| 2 | Drain | passive | Drain terminal; the datasheet gives V(BR)DSS of 600 V minimum and VDS,max at Tj,max of 650 V. |
| 3 | Source | passive | Source terminal; the datasheet rates continuous drain current at 18 A for TC=25°C and 11 A for TC=100°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | VGS=0V,ID=1mA | 5 | ||
| Gate threshold voltage | V(GS)th | 3 | 3.5 | 4 | V | VDS=VGS,ID=0.28mA | 5 |
| Gate-source leakage current | IGSS | 1000 | nA | VGS=20V,VDS=0V | 5 | ||
| Drain-source on-state resistance | RDS(on) | 0.145 | 0.18 | Ω | VGS=10V,ID=5.6A,Tj=25°C | 5 | |
| Drain-source on-state resistance | RDS(on) | 0.34 | Ω | VGS=10V,ID=5.6A,Tj=150°C | 5 | ||
| Continuous drain current | ID | 18 | A | TC=25°C | 3 | ||
| Continuous drain current | ID | 11 | A | TC=100°C | 3 | ||
| Pulsed drain current | ID,pulse | 53 | A | TC=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 56 | mJ | ID=4.0A; VDD=50V; see table 10 | 3 | ||
| Avalanche energy, repetitive | EAR | 0.28 | mJ | ID=4.0A; VDD=50V; see table 10 | 3 | ||
| Avalanche current, single pulse | IAS | 4 | A | 3 | |||
| MOSFET dv/dt ruggedness | dv/dt | 80 | V/ns | VDS=0...400V | 3 | ||
| Gate source voltage (static) | VGS | -20 | 20 | V | static | 3 | |
| Gate source voltage (dynamic) | VGS | -30 | 30 | V | AC (f>1 Hz) | 3 | |
| Power dissipation | Ptot | 72 | W | TC=25°C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Operating junction temperature | Tj | -55 | 150 | °C | 3 | ||
| Mounting torque | 60 | Ncm | M3 and M3.5 screws | 3 | |||
| Continuous diode forward current | IS | 18 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | 53 | A | TC=25°C | 3 | ||
| Reverse diode dv/dt | dv/dt | 50 | V/ns | VDS=0...400V,ISD<=18A,Tj=25°C | 3 | ||
| Maximum diode commutation speed | diF/dt | 900 | A/µs | VDS=0...400V,ISD<=18A,Tj=25°C | 3 | ||
| Thermal resistance, junction - case | RthJC | 1.74 | °C/W | 4 | |||
| Thermal resistance, junction - ambient (leaded) | RthJA | 62 | °C/W | leaded | 4 | ||
| Soldering temperature, wavesoldering | Tsold | 260 | °C | 1.6mm (0.063 in.) from case for 10s | 4 |
CAD (KiCad official)
- Symbol:
IPW60R180P7 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
ipw60r180p7-etched.step/ipw60r180p7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipw60r180p7.step/ipw60r180p7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (14 pp, sha256
340da3487352a450, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).