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IPW60R037CSFD

Infineon Technologies · MOSFETs · TO-247-3

IPW60R037CSFD from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the MOSFET; the datasheet gives static gate-source voltage limits of -20 V to 20 V and dynamic limits of -30 V to 30 V (AC, f>1 Hz).
2 Drain passive Drain of the MOSFET; rated at 600 V minimum drain-source breakdown voltage (V(BR)DSS) with 54 A continuous drain current at TC=25°C.
3 Source passive Source of the MOSFET and the reference terminal for the gate drive; the datasheet specifies the drain-source and gate-source ratings relative to this pin.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 54 A TC=25°C 3
Continuous drain current ID 34 A TC=100°C 3
Pulsed drain current ID,pulse 236 A TC=25°C 3
Avalanche energy, single pulse EAS 277 mJ ID=7.8A; VDD=50V; see table 10 3
Avalanche energy, repetitive EAR 1.39 mJ ID=7.8A; VDD=50V; see table 10 3
Avalanche current, single pulse IAS 7.8 A 3
MOSFET dv/dt ruggedness dv/dt 120 V/ns VDS=0...400V 3
Gate source voltage (static) VGS -20 20 V static 3
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation Ptot 245 W TC=25°C 3
Storage temperature Tstg -55 150 °C 3
Operating junction temperature Tj -55 150 °C 3
Mounting torque 60 Ncm M3 and M3.5 screws 3
Continuous diode forward current IS 54 A TC=25°C 3
Diode pulse current IS,pulse 236 A TC=25°C 3
Reverse diode dv/dt dv/dt 70 V/ns VDS=0...400V,ISD<=54A,Tj=25°C 3
Maximum diode commutation speed diF/dt 1300 A/µs VDS=0...400V,ISD<=54A,Tj=25°C 3
Thermal resistance, junction - case RthJC 0.51 °C/W 4
Thermal resistance, junction - ambient RthJA 62 °C/W leaded 4
Soldering temperature, wavesoldering (leads only) Tsold 260 °C 1.6mm (0.063 in.) from case for 10s 4
Drain-source breakdown voltage V(BR)DSS 600 V VGS=0V,ID=1mA 5
Gate threshold voltage V(GS)th 3.5 4 4.5 V VDS=VGS,ID=1.63mA 5
Gate-source leakage current IGSS 100 nA VGS=20V,VDS=0V 5
Drain-source on-state resistance RDS(on) 0.031 0.037 Ω VGS=10V,ID=32.6A,Tj=25°C 5

CAD (KiCad official)

  • Symbol: IPW60R037CSFD
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ipw60r037csfd-etched.step / ipw60r037csfd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipw60r037csfd.step / ipw60r037csfd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 e88c186c6b8ea2ce, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF