# IPU60R2K1CEAKMA1

**Infineon Technologies** · MOSFETs · TO-251-3

IPU60R2K1CEAKMA1 from Infineon Technologies, in a TO-251-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate pin of the MOSFET with static VGS limits of -20 V to 20 V (dynamic -30 V to 30 V). |
| 2 | Drain | passive | Drain pin (also connected to the tab) with V(BR)DSS of 600 V minimum and continuous drain current of 3.7 A at TC=25°C. |
| 3 | Source | passive | Source pin with continuous diode forward current of 2.7 A at TC=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-251-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID |  |  | 3.7 | A | TC=25°C | 3 |
| Continuous drain current | ID |  |  | 2.4 | A | TC=100°C | 3 |
| Pulsed drain current | ID,pulse |  |  | 6 | A | TC=25°C | 3 |
| Avalanche energy, single pulse | EAS |  |  | 11 | mJ | ID=0.4A; VDD=50V | 3 |
| Avalanche energy, repetitive | EAR |  |  | 0.06 | mJ | ID=0.4A; VDD=50V | 3 |
| Avalanche current, repetitive | IAR |  |  | 0.4 | A |  | 3 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 50 | V/ns | VDS=0...480V | 3 |
| Gate source voltage (static) | VGS | -20 |  | 20 | V | static | 3 |
| Gate source voltage (dynamic) | VGS | -30 |  | 30 | V | AC (f>1 Hz) | 3 |
| Power dissipation TO-251, TO252 | Ptot |  |  | 38 | W | TC=25°C | 3 |
| Storage temperature | Tstg | -40 |  | 150 | °C |  | 3 |
| Operating junction temperature | Tj | -40 |  | 150 | °C |  | 3 |
| Continuous diode forward current | IS |  |  | 2.7 | A | TC=25°C | 3 |
| Diode pulse current | IS,pulse |  |  | 6 | A | TC=25°C | 3 |
| Reverse diode dv/dt | dv/dt |  |  | 15 | V/ns | VDS=0...400V,ISD<=IS,Tj=25°C | 3 |
| Maximum diode commutation speed | dif/dt |  |  | 500 | A/µs | VDS=0...400V,ISD<=IS,Tj=25°C | 3 |
| Thermal resistance, junction - case | RthJC |  |  | 3.26 | °C/W |  | 3 |
| Thermal resistance, junction - ambient | RthJA |  |  | 62 | °C/W | leaded | 3 |
| Soldering temperature, wave soldering | Tsold |  |  | 260 | °C | 1.6mm (0.063 in.) from case for 10s | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 600 |  |  | V | VGS=0V,ID=0.25mA | 4 |
| Gate threshold voltage | V(GS)th | 2.5 | 3 | 3.5 | V | VDS=VGS,ID=0.06mA | 4 |
| Zero gate voltage drain current | IDSS |  |  | 10 | µA | VDS=600,VGS=0V,Tj=25°C | 4 |
| Gate-source leakage current | IGSS |  |  | 100 | nA | VGS=20V,VDS=0V | 4 |
| Drain-source on-state resistance | RDS(on) |  | 1.8 | 2.1 | Ω | VGS=10V,ID=0.76A,Tj=25°C | 4 |
| Drain-source on-state resistance | RDS(on) |  | 4.68 |  | Ω | VGS=10V,ID=0.76A,Tj=150°C | 4 |
| Zero gate voltage drain current | IDSS |  | 1 |  | µA | VDS=600,VGS=0V,Tj=150°C | 4 |
| Gate resistance | RG |  | 12 |  | Ω | f=1MHz,open drain | 4 |
| Input capacitance | Ciss |  | 140 |  | pF | VGS=0V,VDS=100V,f=1MHz | 4 |
| Output capacitance | Coss |  | 12 |  | pF | VGS=0V,VDS=100V,f=1MHz | 4 |
| Effective output capacitance, energy related | Co(er) |  | 8.5 |  | pF | VGS=0V,VDS=0...480V | 4 |
| Effective output capacitance, time related | Co(tr) |  | 30 |  | pF | ID=constant,VGS=0V,VDS=0...480V | 4 |
| Turn-on delay time | td(on) |  | 7 |  | ns | VDD=400V,VGS=10V,ID=0.9A,RG=12.2Ω | 4 |
| Rise time | tr |  | 7 |  | ns | VDD=400V,VGS=10V,ID=0.9A,RG=12.2Ω | 4 |
| Turn-off delay time | td(off) |  | 30 |  | ns | VDD=400V,VGS=10V,ID=0.9A,RG=12.2Ω | 4 |
| Fall time | tf |  | 50 |  | ns | VDD=400V,VGS=10V,ID=0.9A,RG=12.2Ω | 4 |
| Gate to source charge | Qgs |  | 0.8 |  | nC | VDD=480V,ID=0.9A,VGS=0to10V | 4 |
| Gate to drain charge | Qgd |  | 3.6 |  | nC | VDD=480V,ID=0.9A,VGS=0to10V | 4 |
| Gate charge total | Qg |  | 6.7 |  | nC | VDD=480V,ID=0.9A,VGS=0to10V | 4 |
| Gate plateau voltage | Vplateau |  | 5.4 |  | V | VDD=480V,ID=0.9A,VGS=0to10V | 4 |
| Diode forward voltage | VSD |  | 0.9 |  | V | VGS=0V,IF=0.9A,Tj=25°C | 5 |
| Reverse recovery time | trr |  | 180 |  | ns | VR=400V,IF=0.9A,diF/dt=100A/µs | 5 |
| Reverse recovery charge | Qrr |  | 0.67 |  | µC | VR=400V,IF=0.9A,diF/dt=100A/µs | 5 |
| Peak reverse recovery current | Irrm |  | 7.1 |  | A | VR=400V,IF=0.9A,diF/dt=100A/µs | 5 |

## CAD (KiCad official)

- Symbol: `IPU60R2K1CEAKMA1`
- Footprint: `Package_TO_SOT_THT:TO-251-3_Vertical`
- 3D model: TO-251-3 (KiCad packages3D, STEP)
- 3D model files: `ipu60r2k1ceakma1-etched.step` / `ipu60r2k1ceakma1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipu60r2k1ceakma1.step` / `ipu60r2k1ceakma1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](docs/ipu60r2k1ceakma1-datasheet.pdf) (14 pp, sha256 `dd11cca11833ef1e`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ipu60r2k1ceakma1-datasheet.pdf)