# IPSA70R450P7SAKMA1

**Infineon Technologies** · MOSFETs · TO-251-3

IPSA70R450P7SAKMA1 from Infineon Technologies, in a TO-251-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; static gate-source voltage is limited to -16 V to 16 V and AC (f>1 Hz) to -30 V to 30 V. |
| 2 | Drain | passive | Drain terminal (also on the tab); drain-source breakdown voltage is 700 V at Tj=25°C and continuous drain current is 10.0 A at TC=20°C. |
| 3 | Source | passive | Source terminal and reference for gate-source voltage; continuous diode forward current is 7.0 A at TC=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-251-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID |  |  | 10 | A | TC = 20°C | 3 |
| Continuous drain current | ID |  |  | 6.5 | A | TC = 100°C | 3 |
| Pulsed drain current | ID,pulse |  |  | 25.9 | A | TC=25°C | 3 |
| Avalanche current, single pulse | IAS |  |  | 3.5 | A | measured with standard leakage inductance of transformer of 7µH | 3 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 100 | V/ns | VDS=0...400V | 3 |
| Gate source voltage | VGS | -16 |  | 16 | V | static | 3 |
| Gate source voltage | VGS | -30 |  | 30 | V | AC (f>1 Hz) | 3 |
| Power dissipation | Ptot |  |  | 50 | W | TC=25°C | 3 |
| Operating and storage temperature | Tj,Tstg | -40 |  | 150 | °C |  | 3 |
| Continuous diode forward current | IS |  |  | 7 | A | TC=25°C | 3 |
| Diode pulse current | IS,pulse |  |  | 25.9 | A | TC = 25°C | 3 |
| Reverse diode dv/dt | dv/dt |  |  | 1 | V/ns | VDS=0...400V,ISD<=IS,Tj=25°C | 3 |
| Maximum diode commutation speed | dif/dt |  |  | 50 | A/µs | VDS=0...400V,ISD<=IS,Tj=25°C | 3 |
| Thermal resistance, junction - case | RthJC |  |  | 2.5 | °C/W |  | 3 |
| Thermal resistance, junction - ambient, leaded | RthJA |  |  | 62 | °C/W | leaded | 3 |
| Soldering temperature, wavesoldering only allowed at leads | Tsold |  |  | 260 | °C | 1.6 mm (0.063 in.) from case for 10s | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 700 |  |  | V | VGS=0V,ID=1mA | 4 |
| Gate threshold voltage | V(GS)th | 2.5 | 3 | 3.5 | V | VDS=VGS,ID=0.12mA | 4 |
| Zero gate voltage drain current | IDSS |  |  | 10 | µA | VDS=700V,VGS=0V,Tj=25°C | 4 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VDS=700V,VGS=0V,Tj=150°C | 4 |
| Gate-source leakage current incl. Zener diode | IGSS |  |  | 1 | µA | VGS=20V,VDS=0V | 4 |
| Drain-source on-state resistance | RDS(on) |  | 0.37 | 0.45 | Ω | VGS=10V,ID=2.3A,Tj=25°C | 4 |
| Drain-source on-state resistance | RDS(on) |  | 0.84 |  | Ω | VGS=10V,ID=2.3A,Tj=150°C | 4 |
| Gate resistance | RG |  | 10 |  | Ω | f=1MHz,opendrain | 4 |
| Input capacitance | Ciss |  | 424 |  | pF | VGS=0V,VDS=400V,f=250kHz | 4 |
| Output capacitance | Coss |  | 8 |  | pF | VGS=0V,VDS=400V,f=250kHz | 4 |
| Effective output capacitance, energy related | Co(er) |  | 21 |  | pF | VGS=0V,VDS=0...400V | 4 |
| Effective output capacitance, time related | Co(tr) |  | 251 |  | pF | ID=constant,VGS=0V,VDS=0...400V | 4 |
| Turn-on delay time | td(on) |  | 16 |  | ns | VDD=400V,VGS=13V,ID=1.7A,RG=5.3Ω | 4 |
| Rise time | tr |  | 6.5 |  | ns | VDD=400V,VGS=13V,ID=1.7A,RG=5.3Ω | 4 |
| Turn-off delay time | td(off) |  | 70 |  | ns | VDD=400V,VGS=13V,ID=1.7A,RG=5.3Ω | 4 |
| Fall time | tf |  | 20 |  | ns | VDD=400V,VGS=13V,ID=1.7A,RG=5.3Ω | 4 |
| Gate to source charge | Qgs |  | 1.9 |  | nC | VDD=400V,ID=1.7A,VGS=0to10V | 4 |
| Gate to drain charge | Qgd |  | 5 |  | nC | VDD=400V,ID=1.7A,VGS=0to10V | 4 |
| Gate charge total | Qg |  | 13.1 |  | nC | VDD=400V,ID=1.7A,VGS=0to10V | 4 |
| Gate plateau voltage | Vplateau |  | 4.4 |  | V | VDD=400V,ID=1.7A,VGS=0to10V | 4 |
| Diode forward voltage | VSD |  | 0.9 |  | V | VGS=0V,IF=2.6A,Tj=25°C | 5 |
| Reverse recovery time | trr |  | 200 |  | ns | VR=400V,IF=1.7A,diF/dt=50A/µs | 5 |
| Reverse recovery charge | Qrr |  | 0.7 |  | µC | VR=400V,IF=1.7A,diF/dt=50A/µs | 5 |
| Peak reverse recovery current | Irrm |  | 8 |  | A | VR=400V,IF=1.7A,diF/dt=50A/µs | 5 |

## CAD (KiCad official)

- Symbol: `IPSA70R450P7SAKMA1`
- Footprint: `Package_TO_SOT_THT:TO-251-3_Vertical`
- 3D model: TO-251-3 (KiCad packages3D, STEP)
- 3D model files: `ipsa70r450p7sakma1-etched.step` / `ipsa70r450p7sakma1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipsa70r450p7sakma1.step` / `ipsa70r450p7sakma1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](docs/ipsa70r450p7sakma1-datasheet.pdf) (13 pp, sha256 `2a0f6c4d6894f1d2`, retrieved 2026-11-02, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ipsa70r450p7sakma1-datasheet.pdf)