component
IPS70R360P7S
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-251-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPS70R360P7S
Infineon Technologies · MOSFETs · TO-251-3
IPS70R360P7S from Infineon Technologies, in a TO-251-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input; VGS limited to ±16 V static (±30 V AC, f>1 Hz) with gate threshold 2.5-3.5 V and integrated ESD protection diode. |
| 2 | Drain | passive | Drain terminal (also connected to the tab); V(BR)DSS minimum 700 V and continuous drain current up to 12.5 A at TC=20°C. |
| 3 | Source | passive | Source terminal; continuous body-diode forward current IS up to 8.5 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-251-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 12.5 | A | TC = 20°C | 3 | ||
| Continuous drain current | ID | 7.5 | A | TC = 100°C | 3 | ||
| Pulsed drain current | ID,pulse | 34 | A | TC=25°C | 3 | ||
| Avalanche current, single pulse | IAS | 4.5 | A | measured with standard leakage inductance of transformer of 10µH | 3 | ||
| MOSFET dv/dt ruggedness | dv/dt | 100 | V/ns | VDS=0...400V | 3 | ||
| Gate source voltage (static) | VGS | -16 | 16 | V | static | 3 | |
| Gate source voltage (AC) | VGS | -30 | 30 | V | AC (f>1 Hz) | 3 | |
| Power dissipation | Ptot | 59.5 | W | TC=25°C | 3 | ||
| Operating and storage temperature | Tj,Tstg | -40 | 150 | °C | 3 | ||
| Continuous diode forward current | IS | 8.5 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | 34 | A | TC = 25°C | 3 | ||
| Reverse diode dv/dt | dv/dt | 1 | V/ns | VDS=0...400V,ISD<=IS,Tj=25°C | 3 | ||
| Maximum diode commutation speed | dif/dt | 50 | A/µs | VDS=0...400V,ISD<=IS,Tj=25°C | 3 | ||
| Thermal resistance, junction-case | RthJC | 2.1 | °C/W | 3 | |||
| Thermal resistance, junction-ambient | RthJA | 62 | °C/W | leaded | 3 | ||
| Soldering temperature | Tsold | 260 | °C | 1.6 mm (0.063 in.) from case for 10s | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 700 | V | VGS=0V,ID=1mA | 4 | ||
| Gate threshold voltage | V(GS)th | 2.5 | 3 | 3.5 | V | VDS=VGS,ID=0.15mA | 4 |
| Zero gate voltage drain current | IDSS | 10 | µA | VDS=700V,VGS=0V,Tj=25°C | 4 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=700V,VGS=0V,Tj=150°C | 4 | ||
| Gate-source leakage current incl. Zener diode | IGSS | 1 | µA | VGS=20V,VDS=0V | 4 | ||
| Drain-source on-state resistance | RDS(on) | 0.3 | 0.36 | Ω | VGS=10V,ID=3.0A,Tj=25°C | 4 | |
| Drain-source on-state resistance | RDS(on) | 0.67 | Ω | VGS=10V,ID=3.0A,Tj=150°C | 4 | ||
| Gate resistance | RG | 30 | Ω | f=1MHz,open drain | 4 | ||
| Input capacitance | Ciss | 517 | pF | VGS=0V,VDS=400V,f=250kHz | 4 | ||
| Output capacitance | Coss | 11 | pF | VGS=0V,VDS=400V,f=250kHz | 4 | ||
| Effective output capacitance, energy related | Co(er) | 27 | pF | VGS=0V,VDS=0...400V | 4 | ||
| Effective output capacitance, time related | Co(tr) | 329 | pF | ID=constant,VGS=0V,VDS=0...400V | 4 | ||
| Turn-on delay time | td(on) | 19 | ns | VDD=400V,VGS=13V,ID=2.3A,RG=5.3Ω | 4 | ||
| Rise time | tr | 8 | ns | VDD=400V,VGS=13V,ID=2.3A,RG=5.3Ω | 4 | ||
| Turn-off delay time | td(off) | 100 | ns | VDD=400V,VGS=13V,ID=2.3A,RG=5.3Ω | 4 | ||
| Fall time | tf | 18 | ns | VDD=400V,VGS=13V,ID=2.3A,RG=5.3Ω | 4 | ||
| Gate to source charge | Qgs | 2.3 | nC | VDD=400V,ID=2.3A,VGS=0to10V | 4 | ||
| Gate to drain charge | Qgd | 6 | nC | VDD=400V,ID=2.3A,VGS=0to10V | 4 | ||
| Gate charge total | Qg | 16.4 | nC | VDD=400V,ID=2.3A,VGS=0to10V | 4 | ||
| Gate plateau voltage | Vplateau | 4.4 | V | VDD=400V,ID=2.3A,VGS=0to10V | 4 | ||
| Diode forward voltage | VSD | 0.9 | V | VGS=0V,IF=3.8A,Tj=25°C | 5 | ||
| Reverse recovery time | trr | 210 | ns | VR=400V,IF=2.3A,diF/dt=50A/µs | 5 | ||
| Reverse recovery charge | Qrr | 1 | µC | VR=400V,IF=2.3A,diF/dt=50A/µs | 5 | ||
| Peak reverse recovery current | Irrm | 10 | A | VR=400V,IF=2.3A,diF/dt=50A/µs | 5 |
CAD (KiCad official)
- Symbol:
IPS70R360P7S - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: TO-251-3 (KiCad packages3D, STEP)
- 3D model files:
ips70r360p7s-etched.step/ips70r360p7s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ips70r360p7s.step/ips70r360p7s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (13 pp, sha256
9010112e1bccdce7, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).