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Contents

README

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IPP80N03S4L03AKSA1

Infineon Technologies · MOSFETs · TO-220-3

IPP80N03S4L03AKSA1 from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; N-channel enhancement-mode gate with a threshold voltage of 1.0 V min to 2.2 V max at ID=90 µA and an absolute maximum gate-source voltage of ±16 V.
2 D passive Drain; carries continuous drain current up to 80 A (320 A pulsed) with a 30 V minimum drain-source breakdown voltage.
3 S passive Source; main current return terminal of the MOSFET, carrying up to 80 A continuous diode forward current.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220-3
Category Triode/MOS Tube/Transistor
Pins 3

CAD (KiCad official)

  • Symbol: IPP80N03S4L03AKSA1
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)
  • 3D model files: ipp80n03s4l03aksa1-etched.step / ipp80n03s4l03aksa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipp80n03s4l03aksa1.step / ipp80n03s4l03aksa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 e408985e3417fa1f, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF