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Contents

README

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IPP60R180P7

Infineon Technologies · MOSFETs · TO-220-3

IPP60R180P7 from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET, with static gate-source voltage limited to ±20 V and dynamic (AC, f>1 Hz) gate-source voltage limited to ±30 V.
2 Drain passive Drain terminal of the MOSFET, rated for 18 A continuous drain current at TC=25°C (11 A at TC=100°C) and 53 A pulsed drain current at TC=25°C.
3 Source passive Source terminal of the MOSFET, serving as the reference for the gate-source voltage, with continuous diode forward current rated at 18 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-source leakage current IGSS 1000 nA VGS=20V,VDS=0V 5
Drain-source breakdown voltage V(BR)DSS 600 V VGS=0V,ID=1mA 5
Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.28mA 5
Drain-source on-state resistance RDS(on) 0.145 0.18 Ω VGS=10V,ID=5.6A,Tj=25°C 5
Continuous drain current ID 18 A TC=25°C 3
Continuous drain current ID 11 A TC=100°C 3
Pulsed drain current ID,pulse 53 A TC=25°C 3
Avalanche energy, single pulse EAS 56 mJ ID=4.0A; VDD=50V; see table 10 3
Avalanche energy, repetitive EAR 0.28 mJ ID=4.0A; VDD=50V; see table 10 3
Avalanche current, single pulse IAS 4 A 3
MOSFET dv/dt ruggedness dv/dt 80 V/ns VDS=0...400V 3
Gate source voltage (static) VGS -20 20 V static 3
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation Ptot 72 W TC=25°C 3
Storage temperature Tstg -55 150 °C 3
Operating junction temperature Tj -55 150 °C 3
Mounting torque 60 Ncm M3 and M3.5 screws 3
Continuous diode forward current IS 18 A TC=25°C 3
Diode pulse current IS,pulse 53 A TC=25°C 3
Reverse diode dv/dt dv/dt 50 V/ns VDS=0...400V,ISD<=18A,Tj=25°C 3
Maximum diode commutation speed diF/dt 900 A/µs VDS=0...400V,ISD<=18A,Tj=25°C 3
Thermal resistance, junction - case RthJC 1.74 °C/W 4
Thermal resistance, junction - ambient (leaded) RthJA 62 °C/W leaded 4
Soldering temperature, wavesoldering (leads only) Tsold 260 °C 1.6mm (0.063 in.) from case for 10s 4

CAD (KiCad official)

  • Symbol: IPP60R180P7
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)
  • 3D model files: ipp60r180p7-etched.step / ipp60r180p7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipp60r180p7.step / ipp60r180p7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 12780b1a01afc040, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF