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IPP60R170CFD7

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Infineon Technologies MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPP60R170CFD7

Infineon Technologies · MOSFETs · TO-220-3

IPP60R170CFD7 from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate pin; gate-source voltage rated ±20 V static and ±30 V dynamic (AC, f>1 Hz), with threshold of 3.5 to 4.5 V at ID=0.3 mA.
2 D passive Drain pin (also connected to the tab); 600 V minimum breakdown voltage, 14 A continuous drain current at TC=25°C and 51 A pulsed.
3 S passive Source pin; carries the continuous diode forward current of up to 14 A at TC=25°C through the body diode.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 600 V VGS=0V, ID=1mA 5
Gate threshold voltage V(GS)th 3.5 4 4.5 V VDS=VGS, ID=0.3mA 5
Zero gate voltage drain current IDSS 1 37 µA VDS=600V, VGS=0V, Tj=25°C / 125°C 5
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V 5
Drain-source on-state resistance RDS(on) 0.144 0.17 Ω VGS=10V, ID=6.0A, Tj=25°C 5
Drain-source on-state resistance (150°C) RDS(on) 0.328 Ω VGS=10V, ID=6.0A, Tj=150°C 5
Reverse recovery time trr 89 134 ns VR=400V, IF=7A, diF/dt=100A/µs 6
Reverse recovery charge Qrr 0.34 0.68 µC VR=400V, IF=7A, diF/dt=100A/µs 6
Continuous drain current ID 14 A TC=25°C 3
Continuous drain current ID 9 A TC=100°C 3
Pulsed drain current ID,pulse 51 A TC=25°C 3
Avalanche energy, single pulse EAS 60 mJ ID=3.7A; VDD=50V 3
Avalanche energy, repetitive EAR 0.3 mJ ID=3.7A; VDD=50V 3
Avalanche current, single pulse IAS 3.7 A 3
MOSFET dv/dt ruggedness dv/dt 120 V/ns VDS=0...400V 3
Gate source voltage (static) VGS -20 20 V static 3
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation Ptot 75 W TC=25°C 3
Storage temperature Tstg -55 150 °C 3
Operating junction temperature Tj -55 150 °C 3
Mounting torque 60 Ncm M3 and M3.5 screws 3
Continuous diode forward current IS 14 A TC=25°C 3
Diode pulse current IS,pulse 51 A TC=25°C 3
Reverse diode dv/dt dv/dt 70 V/ns VDS=0...400V, ISD<=14A, Tj=25°C 3
Maximum diode commutation speed diF/dt 1300 A/µs VDS=0...400V, ISD<=14A, Tj=25°C 3
Thermal resistance, junction - case RthJC 1.67 °C/W 4
Thermal resistance, junction - ambient RthJA 62 °C/W leaded 4
Soldering temperature Tsold 260 °C 1.6mm (0.063 in.) from case for 10s 4
Gate resistance RG 10.9 Ω f=1MHz, open drain 5
Input capacitance Ciss 1199 pF VGS=0V, VDS=400V, f=250kHz 5
Output capacitance Coss 22 pF VGS=0V, VDS=400V, f=250kHz 5
Gate charge total Qg 28 nC VDD=400V, ID=7.0A, VGS=0 to 10V 5
Diode forward voltage VSD 1 V VGS=0V, IF=6.0A, Tj=25°C 6

CAD (KiCad official)

  • Symbol: IPP60R170CFD7
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)
  • 3D model files: ipp60r170cfd7-etched.step / ipp60r170cfd7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipp60r170cfd7.step / ipp60r170cfd7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 b3d82b274ff0110f, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF