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IPP60R040S7XKSA1

Public Made by Adom

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Infineon Technologies MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistoripp60r040s7xksa1factory-2.0.0extractor-text

Verified IPP60R040S7XKSA1

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IPP60R040S7XKSA1 · TO-220-3 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 14-page datasheet
  • ✓distributor: lcsc C6577191, digikey 448-IPP60R040S7XKSA1-ND, mouser 726-IPP60R040S7XKSA1
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-vrqja4m_/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ipp60r040s7xksa1.kicad_sym✓ ipp60r040s7xksa1.kicad_mod✓ ipp60r040s7xksa1.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7d ago
viewers ipp60r040s7xksa1: viewers · Ray 7d ago
ipp60r040s7xksa1-etched.glb Publish 0.1.0 · Ray 7d ago
ipp60r040s7xksa1-etched.step ipp60r040s7xksa1: factory component page (tier=lcsc) · Ray 7d ago
ipp60r040s7xksa1-hero.glb ipp60r040s7xksa1: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
ipp60r040s7xksa1-hero.overlay.json Publish 0.1.0 · Ray 7d ago
ipp60r040s7xksa1.glb Publish 0.1.0 · Ray 7d ago
ipp60r040s7xksa1.kicad_mod Publish 0.1.0 · Ray 7d ago
ipp60r040s7xksa1.kicad_sym Publish 0.1.0 · Ray 7d ago
ipp60r040s7xksa1.lbr Publish 0.1.0 · Ray 7d ago
ipp60r040s7xksa1.step Publish 0.1.0 · Ray 7d ago
package.json Publish 0.1.0 · Ray 7d ago
page.json Set visibility: public · Ray 7d ago
README.md Publish 0.1.0 · Ray 7d ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 7d ago

IPP60R040S7XKSA1

Infineon Technologies · MOSFETs · TO-220-3

IPP60R040S7XKSA1 from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the MOSFET, with static VGS limited to -20 V to 20 V and dynamic VGS limited to -30 V to 30 V (AC, f>1 Hz), and dv/dt to be limited by an appropriate gate resistor.
2 Drain passive Drain of the MOSFET (also connected to the mounting tab), rated for a minimum drain-source breakdown voltage of 600 V, 13 A drain current at TC=140°C, and 207 A pulsed drain current at TC=25°C.
3 Source passive Source of the MOSFET, with the internal body diode shown between drain and source, rated for 13 A diode forward current at TC=140°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain current rating ID 13 A TC=140°C 3
Pulsed drain current ID,pulse 207 A TC=25°C 3
Avalanche energy, single pulse EAS 159 mJ ID=2.8A; VDD=50V; see table 10 3
Avalanche current, single pulse IAS 2.8 A 3
MOSFET dv/dt ruggedness dv/dt 20 V/ns VDS=0V to 300V 3
Gate source voltage (static) VGS -20 20 V static 3
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation Ptot 245 W TC=25°C 3
Storage temperature Tstg -55 150 °C 3
Operating junction temperature Tj -55 150 °C 3
Mounting torque 60 Ncm M3 and M3.5 screws 3
Diode forward current rating IS 13 A TC=140°C 3
Diode pulse current IS,pulse 207 A TC=25°C 3
Reverse diode dv/dt dv/dt 5 V/ns VDS=0 to 300V, ISD<=13A, Tj=25°C 3
Maximum diode commutation speed dif/dt 820 A/µs VDS=0 to 300V, ISD<=13A, Tj=25°C 3
Thermal resistance, junction - case RthJC 0.51 °C/W 4
Thermal resistance, junction - ambient RthJA 62 °C/W leaded 4
Soldering temperature, wavesoldering Tsold 260 °C only allowed at leads; 1.6mm (0.063 in.) from case for 10s 4
Drain-source breakdown voltage V(BR)DSS 600 V VGS=0V, ID=1mA 5
Gate threshold voltage V(GS)th 3.5 4 4.5 V VDS=VGS, ID=0.79mA 5
Zero gate voltage drain current (Tj=25°C) IDSS 20 µA VDS=600V, VGS=0V, Tj=25°C 5
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V 5
Drain-source on-state resistance (Tj=25°C) RDS(on) 0.036 0.04 Ω VGS=12V, ID=13A, Tj=25°C 5

CAD (KiCad official)

  • Symbol: IPP60R040S7XKSA1
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)
  • 3D model files: ipp60r040s7xksa1-etched.step / ipp60r040s7xksa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipp60r040s7xksa1.step / ipp60r040s7xksa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 4917e585ffb3937c, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF