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ipp600n25n3gxksa1: factory component page (tier=lcsc)

Ray ·6639e11587 ·1mo ago ·parent 750030d
1 file changed +100−8
page.json+100−8
@@ -1,13 +1,110 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "ipp600n25n3gxksa1",+  "title": "IPP600N25N3GXKSA1",+  "brief": "Infineon Technologies MOSFETs, TO-220-3. Datasheet-verified pinout, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "Infineon Technologies MOSFETs, TO-220-3. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors-thyristors",     "ipp600n25n3gxksa1"   ],+  "component": {+    "mpn": "IPP600N25N3GXKSA1",+    "manufacturer": "Infineon Technologies",+    "package": "TO-220-3",+    "pin_count": 3,+    "category": "Transistors/Thyristors",+    "subcategory": "MOSFETs",+    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603095796845985792",+    "parts": {+      "symbol": "ipp600n25n3gxksa1.kicad_sym",+      "footprint": "ipp600n25n3gxksa1.kicad_mod",+      "model_3d": "ipp600n25n3gxksa1.glb",+      "model_3d_step": "ipp600n25n3gxksa1.step",+      "lbr": "ipp600n25n3gxksa1.lbr"+    },+    "distributor_links": {},+    "pins": [+      {+        "number": "1",+        "name": "G",+        "type": "input",+        "description": "Gate. Isolated MOS gate controlling the channel; VGS threshold typ. 3 V (2-4 V). Absolute max VGS \u00b120 V, gate charge Qg typ. 22 nC, gate resistance RG typ. 2.5 \u03a9. Drive to ~10 V for full enhancement (RDS(on) \u2264 60 m\u03a9)."+      },+      {+        "number": "2",+        "name": "D",+        "type": "passive",+        "description": "Drain. Positive terminal of the N-channel switch and cathode of the intrinsic body diode. Rated VDS(BR) 250 V, ID 25 A @ TC=25 \u00b0C (18 A @ TC=100 \u00b0C), pulsed 100 A. Electrically common with the metal mounting tab."+      },+      {+        "number": "3",+        "name": "S",+        "type": "passive",+        "description": "Source. Negative terminal of the N-channel switch and anode of the intrinsic body diode (VSD typ. 1 V @ IF=25 A). Reference for VGS and VDS; carries the full drain current in the on-state."+      }+    ],+    "provenance": {+      "extractor": "ds2sf",+      "datasheet": {+        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603095796845985792",+        "pages": null,+        "sha256": "8b64c8ffb981dd78",+        "source_tier": "lcsc"+      },+      "cad": "KiCad official (CC-BY-SA 4.0)",+      "pins": {+        "total": 3,+        "described": 3,+        "cites_pages": true,+        "refuses_to_fabricate": true+      }+    },+    "viewers": {+      "symbol": "viewers/symbol.html",+      "footprint": "viewers/footprint.html"+    }+  },+  "metadata": {+    "specs": {+      "Manufacturer": "Infineon Technologies",+      "Package": "TO-220-3",+      "Category": "Transistors/Thyristors",+      "Pins": "3"+    }+  },+  "variants": [+    {+      "mpn": "IPP600N25N3GXKSA1",+      "kind": "packaging"+    },+    {+      "mpn": "IPP600N25N3GXKSA1IPB600N25N3G",+      "kind": "packaging"+    },+    {+      "mpn": "IPP600N25N3GXKSA1IPI600N25N3G",+      "kind": "packaging"+    }+  ],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "ipp600n25n3gxksa1"+  ],+  "discovery_pitch": "IPP600N25N3GXKSA1 (Infineon Technologies) component page with datasheet-verified CAD.",+  "author": {+    "name": "Ray",+    "email": "[email protected]"+  },   "dependencies": {},   "hero": {     "type": "image",@@ -25,10 +122,5 @@     "docs/ipp600n25n3gxksa1-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ],-  "visibility": "public",-  "author": {-    "name": "Ray",-    "email": "[email protected]"-  }+  ] }\ No newline at end of file