IPP50R380CEXKSA1 from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Gate	input	Gate pin 1 of the MOSFET; the datasheet gives static gate-source voltage limits of -20 V to 20 V and AC (f>1 Hz) limits of -30 V to 30 V.
2	Drain	passive	Drain pin 2 of the MOSFET, also connected to the tab; the drain-source breakdown voltage V(BR)DSS is specified as 500 V minimum.
3	Source	passive	Source pin 3 of the MOSFET as printed on the PG-TO220 package.

Key specifications

Parameter	Value
Manufacturer	Infineon Technologies
Package	TO-220-3
Category	Triode/MOS Tube/Transistor
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Continuous drain current	ID			14.1	A	TC = 25°C	3
Continuous drain current	ID			8.9	A	TC = 100°C	3
Pulsed drain current	ID,pulse			32.4	A	TC=25°C	3
Avalanche energy, single pulse	EAS			173	mJ	ID =4A; VDD = 50V	3
Avalanche energy, repetitive	EAR			0.26	mJ	ID =4A; VDD = 50V	3
Avalanche current, repetitive	IAR			4	A		3
MOSFET dv/dt ruggedness	dv/dt			50	V/ns	VDS=0...400V	3
Gate source voltage	VGS	-20		20	V	static	3
Gate source voltage	VGS	-30		30	V	AC (f>1 Hz)	3
Power dissipation (non FullPAK) TO-220	Ptot			98	W	TC=25°C	3
Operating and storage temperature	Tj,Tstg	-55		150	°C		3
Mounting torque (non FullPAK) TO-220				60	Ncm	M3 and M3.5 screws	3
Continuous diode forward current	IS			10	A	TC=25°C	3
Diode pulse current	IS,pulse			32.4	A	TC = 25°C	3
Reverse diode dv/dt	dv/dt			15	V/ns	VDS=0...400V,ISD<=IS,Tj=25°C, tcond<2µs	3
Maximum diode commutation speed	dif/dt			500	A/µs	VDS=0...400V,ISD<=IS,Tj=25°C, tcond<2µs	3
Thermal resistance, junction - case	RthJC			1.27	°C/W		3
Thermal resistance, junction - ambient	RthJA			62	°C/W	leaded	3
Soldering temperature, wavesoldering	Tsold			260	°C	1.6mm (0.063 in.) from case for 10s	3
Drain-source breakdown voltage	V(BR)DSS	500			V	VGS=0V,ID=1mA	4
Gate threshold voltage	V(GS)th	2.5	3	3.5	V	VDS=VGS,ID=0.26mA	4
Zero gate voltage drain current	IDSS			10	µA	VDS=500V,VGS=0V,Tj=25°C	4
Zero gate voltage drain current	IDSS			1	µA	VDS=500V,VGS=0V,Tj=150°C	4
Gate-source leakage current	IGSS			100	nA	VGS=20V,VDS=0V	4
Drain-source on-state resistance	RDS(on)		0.35	0.38	Ω	VGS=13V,ID=3.2A,Tj=25°C	4
Drain-source on-state resistance	RDS(on)		0.9		Ω	VGS=13V,ID=3.2A,Tj=150°C	4
Gate resistance	RG		3		Ω	f=1MHz, open drain	4

CAD (KiCad official)

Symbol: IPP50R380CEXKSA1
Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
3D model: TO-220-3 (KiCad packages3D, STEP)
3D model files: ipp50r380cexksa1-etched.step / ipp50r380cexksa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipp50r380cexksa1.step / ipp50r380cexksa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Infineon Technologies datasheet (13 pp, sha256 63525311c2e39a92, retrieved 2026-11-02, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

IPP50R380CEXKSA1

Verified IPP50R380CEXKSA1

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3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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