component

IPP057N08N3 G-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsipp057n08n3 g-vbfactory-2.0.0extractor-text

Verified IPP057N08N3 G-VB

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IPP057N08N3 G-VB · TO-220AB · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-sofsfngp/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ipp057n08n3-g-vb.kicad_sym✓ ipp057n08n3-g-vb.kicad_mod✓ ipp057n08n3-g-vb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 5d ago
viewers ipp057n08n3-g-vb: viewers · Ray 5d ago
ipp057n08n3-g-vb-etched.glb Publish 0.1.0 · Ray 5d ago
ipp057n08n3-g-vb-etched.step ipp057n08n3-g-vb: factory component page (tier=lcsc) · Ray 5d ago
ipp057n08n3-g-vb-hero.glb ipp057n08n3-g-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 5d ago
ipp057n08n3-g-vb-hero.overlay.json Publish 0.1.0 · Ray 5d ago
ipp057n08n3-g-vb.glb Publish 0.1.0 · Ray 5d ago
ipp057n08n3-g-vb.kicad_mod Publish 0.1.0 · Ray 5d ago
ipp057n08n3-g-vb.kicad_sym Publish 0.1.0 · Ray 5d ago
ipp057n08n3-g-vb.lbr Publish 0.1.0 · Ray 5d ago
ipp057n08n3-g-vb.step Publish 0.1.0 · Ray 5d ago
package.json Publish 0.1.0 · Ray 5d ago
page.json Set visibility: public · Ray 5d ago
README.md Publish 0.1.0 · Ray 5d ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 5d ago

IPP057N08N3 G-VB

VBsemi Elec · MOSFETs · TO-220AB

IPP057N08N3 G-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, with gate-source voltage rated at ±20 V (VGS) in the absolute maximum ratings.
2 D passive Drain terminal of the N-channel MOSFET, with drain-source voltage rated at 80 V (VDS) in the absolute maximum ratings.
3 S passive Source terminal of the N-channel MOSFET, with continuous source-drain diode current IS rated at 75 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Threshold Voltage VGS(th) 2 3.5 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 80 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS = 80 V, VGS = 0 V, TJ = 55 °C 2
Forward Transconductance gfs 60 S VDS = 10 V, ID = 20 A 2
Gate Resistance Rg 0.5 1.3 2 Ω f = 1 MHz 2
Continuous Source-Drain Diode Current IS 75 A TC = 25 °C 2
Body Diode Voltage VSD 0.76 1.1 V IS = 5 A 2
Body Diode Reverse Recovery Time trr 38 75 ns IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 36 70 nC IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C 2
Drain-Source Breakdown Voltage Temperature Coefficient VDS/TJ 37 mV/°C ID = 250 μA 2
Gate-Source Threshold Voltage Temperature Coefficient VGS(th)/TJ -6.1 mV/°C 2
Drain-Source Voltage VDS 80 V 1
Gate-Source Voltage VGS -20 20 V 1
Pulsed Drain Current IDM 350 A t = 100 μs 1
Continuous Source-Drain Diode Current IS 4.5 A TA = 25 °C 1
Single Pulse Avalanche Current IAS 30 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 45 mJ 1
Maximum Power Dissipation PD 180 W TC = 25 °C 1
Maximum Power Dissipation PD 120 W TC = 70 °C 1
Maximum Power Dissipation PD 5 W TA = 25 °C 1
Maximum Power Dissipation PD 3.2 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C 1
Maximum Junction-to-Ambient RthJA 15 18 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient RthJA 40 50 °C/W Steady State 1
Maximum Junction-to-Case RthJC 0.85 1.1 °C/W 1

CAD (KiCad official)

  • Symbol: IPP057N08N3 G-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: ipp057n08n3-g-vb-etched.step / ipp057n08n3-g-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipp057n08n3-g-vb.step / ipp057n08n3-g-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 311ccbc6e6a348f8, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF