component

IPP039N04L G-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistoripp039n04l g-vbfactory-2.0.0extractor-text

Verified IPP039N04L G-VB

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IPP039N04L G-VB · TO-220AB · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-h9ttvwlk/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ipp039n04l-g-vb.kicad_sym✓ ipp039n04l-g-vb.kicad_mod✓ ipp039n04l-g-vb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 4d ago
viewers ipp039n04l-g-vb: viewers · Ray 4d ago
ipp039n04l-g-vb-etched.glb Publish 0.1.0 · Ray 4d ago
ipp039n04l-g-vb-etched.step ipp039n04l-g-vb: factory component page (tier=lcsc) · Ray 4d ago
ipp039n04l-g-vb-hero.glb ipp039n04l-g-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 4d ago
ipp039n04l-g-vb-hero.overlay.json Publish 0.1.0 · Ray 4d ago
ipp039n04l-g-vb.glb Publish 0.1.0 · Ray 4d ago
ipp039n04l-g-vb.kicad_mod Publish 0.1.0 · Ray 4d ago
ipp039n04l-g-vb.kicad_sym Publish 0.1.0 · Ray 4d ago
ipp039n04l-g-vb.lbr Publish 0.1.0 · Ray 4d ago
ipp039n04l-g-vb.step Publish 0.1.0 · Ray 4d ago
package.json Publish 0.1.0 · Ray 4d ago
page.json Set visibility: public · Ray 4d ago
README.md Publish 0.1.0 · Ray 4d ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 4d ago

IPP039N04L G-VB

VBsemi Elec · MOSFETs · TO-220AB

IPP039N04L G-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate-source voltage is rated ±20 V and gate-source threshold voltage is 1.2 V min to 2.5 V max at ID = 250 µA.
2 D passive Drain-source voltage is rated 40 V and continuous drain current is 110 A at TC = 25 °C, limited by the package.
3 S passive Continuous source-drain diode current is rated 110 A at TC = 25 °C, and body diode voltage is 0.8 V typical at IS = 20 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current (TJ = 175 °C) ID 110 A TC = 25 °C 1
Continuous Drain Current (TJ = 175 °C) ID 90 A TC = 70 °C 1
Continuous Drain Current (TJ = 175 °C) ID 31 A TA = 25 °C, surface mounted 1
Continuous Drain Current (TJ = 175 °C) ID 25 A TA = 70 °C, surface mounted 1
Pulsed Drain Current IDM 270 A 1
Avalanche Current Pulse IAS 85 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 320 V 1
Continuous Source-Drain Diode Current IS 110 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 2.6 A TA = 25 °C 1
Maximum Power Dissipation PD 312 W TC = 25 °C 1
Maximum Power Dissipation PD 200 W TC = 70 °C 1
Maximum Power Dissipation PD 3.13 W TA = 25 °C 1
Maximum Power Dissipation PD 2 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient Steady State RthJA 32 40 °C/W Steady state 1
Maximum Junction-to-Case Steady State RthJC 0.33 0.4 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS 40 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1.2 2.5 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 40 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 40 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 120 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 6 mΩ VGS = 10 V, ID = 30 A 2
Drain-Source On-State Resistance RDS(on) 7 mΩ VGS = 4.5 V, ID = 20 A 2
Forward Transconductance gfs 180 S VDS = 15 V, ID = 30 A 2
Output Capacitance Coss 750 pF VDS = 20 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 310 pF VDS = 20 V, VGS = 0 V, f = 1 MHz 2
Total Gate Charge Qg 130 nC VDS = 20 V, VGS = 10 V, ID = 20 A 2
Gate-Source Charge Qgs 20 nC VDS = 20 V, VGS = 10 V, ID = 20 A 2
Gate-Drain Charge Qgd 32 nC VDS = 20 V, VGS = 10 V, ID = 20 A 2
Gate Resistance Rg 0.85 1.3 Ω f = 1 MHz 2
VDS Temperature Coefficient ΔVDS/TJ 41 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -8 mV/°C 2
Turn-On Delay Time td(on) 20 30 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 11 17 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 77 115 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 10 15 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 102 155 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 62 95 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 180 270 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 60 90 ns VDD = 20 V, RL = 1.0 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 110 A TC = 25 °C 2
Pulse Diode Forward Current ISM 200 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 20 A 2
Body Diode Reverse Recovery Time trr 50 75 ns IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 70 105 nC IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: IPP039N04L G-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: ipp039n04l-g-vb-etched.step / ipp039n04l-g-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipp039n04l-g-vb.step / ipp039n04l-g-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 56393e424e8edba1, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF