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IPP026N10NF2SAKMA1

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Infineon Technologies MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPP026N10NF2SAKMA1

Infineon Technologies · MOSFETs · TO-220

IPP026N10NF2SAKMA1 from Infineon Technologies, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control terminal; the gate-source voltage VGS is rated from -20 V to 20 V, and the gate resistance RG is typically 1.8 Ω.
2 Drain passive Drain terminal, also connected to the mounting tab; continuous drain current is 184 A at VGS=10 V and TC=25 °C, with drain-source breakdown voltage V(BR)DSS of 100 V minimum.
3 Source passive Source terminal and return path for the drain current; the body diode forward voltage VSD is 0.90 V typical and 1.2 V maximum at IF=100 A and Tj=25 °C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 184 A VGS=10V,TC=25°C 3
Continuous drain current ID 141 A VGS=10V,TC=100°C 3
Continuous drain current ID 140 A VGS=6V,TC=100°C 3
Continuous drain current ID 27 A VGS=10V,TA=25°C,RthJA=40°C/W 3
Pulsed drain current ID,pulse 736 A TA=25°C 3
Avalanche energy, single pulse EAS 430 mJ ID=100A,RGS=25Ω 3
Gate source voltage VGS -20 20 V 3
Power dissipation Ptot 250 W TC=25°C 3
Power dissipation Ptot 3.8 W TA=25°C,RthJA=40°C/W 3
Operating and storage temperature Tj,Tstg -55 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 3
Thermal resistance, junction - case RthJC 0.6 °C/W 3
Thermal resistance, junction - ambient, 6 cm² cooling area RthJA 40 °C/W 3
Thermal resistance, junction - ambient, minimal footprint RthJA 62 °C/W 3
Drain-source breakdown voltage V(BR)DSS 100 V VGS=0V,ID=1mA 4
Gate threshold voltage VGS(th) 2.2 3 3.8 V VDS=VGS,ID=169µA 4
Zero gate voltage drain current (Tj=25°C) IDSS 0.1 1 µA VDS=100V,VGS=0V,Tj=25°C 4
Zero gate voltage drain current (Tj=125°C) IDSS 10 100 µA VDS=100V,VGS=0V,Tj=125°C 4
Gate-source leakage current IGSS 10 100 nA VGS=20V,VDS=0V 4
Drain-source on-state resistance (VGS=10V) RDS(on) 2.3 2.6 mΩ VGS=10V,ID=100A 4
Drain-source on-state resistance (VGS=6V) RDS(on) 2.7 3.2 mΩ VGS=6V,ID=50A 4
Transconductance gfs 105 S /VDS/≥2/ID/RDS(on)max,ID=100A 4
Gate charge total Qg 103 154 nC VDD=50V,ID=100A,VGS=0to10V 4
Diode continuous forward current IS 150 A TC=25°C 5
Diode pulse current IS,pulse 736 A TC=25°C 5
Diode forward voltage VSD 0.9 1.2 V VGS=0V,IF=100A,Tj=25°C 5

CAD (KiCad official)

  • Symbol: IPP026N10NF2SAKMA1
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: ipp026n10nf2sakma1-etched.step / ipp026n10nf2sakma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipp026n10nf2sakma1.step / ipp026n10nf2sakma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 d64825e570b36a43, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF