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IPP026N04NF2S

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Infineon Technologies MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsipp026n04nf2sfactory-2.0.0extractor-text

Verified IPP026N04NF2S

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IPP026N04NF2S · TO-220-3 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 11-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-e39q1ru6/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ipp026n04nf2s.kicad_sym✓ ipp026n04nf2s.kicad_mod✓ ipp026n04nf2s.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 2d ago
viewers ipp026n04nf2s: viewers · Ray 2d ago
ipp026n04nf2s-etched.glb Publish 0.1.0 · Ray 2d ago
ipp026n04nf2s-etched.step ipp026n04nf2s: factory component page (tier=lcsc) · Ray 2d ago
ipp026n04nf2s-hero.glb ipp026n04nf2s: hero GLB from the etched model (keeps the MPN mark) · Ray 2d ago
ipp026n04nf2s-hero.overlay.json Publish 0.1.0 · Ray 2d ago
ipp026n04nf2s.glb Publish 0.1.0 · Ray 2d ago
ipp026n04nf2s.kicad_mod Publish 0.1.0 · Ray 2d ago
ipp026n04nf2s.kicad_sym Publish 0.1.0 · Ray 2d ago
ipp026n04nf2s.lbr Publish 0.1.0 · Ray 2d ago
ipp026n04nf2s.step Publish 0.1.0 · Ray 2d ago
package.json Publish 0.1.0 · Ray 2d ago
page.json Set visibility: public · Ray 2d ago
README.md Publish 0.1.0 · Ray 2d ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 2d ago

IPP026N04NF2S

Infineon Technologies · MOSFETs · TO-220-3

IPP026N04NF2S from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the N-channel MOSFET, rated for VGS from -20 V to 20 V, with gate threshold VGS(th) of 2.1 V to 3.4 V at VDS=VGS and ID=81 µA.
2 Drain passive Drain of the MOSFET, rated for 40 V drain-source breakdown voltage (V(BR)DSS) and 121 A continuous drain current at TC=25°C with VGS=10 V.
3 Source passive Source of the MOSFET and reference terminal for VGS; the datasheet gives a body-diode continuous forward current IS of 94 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current (VGS=10V, TC=25°C) ID 121 A VGS=10V, TC=25°C 3
Continuous drain current (VGS=10V, TC=100°C) ID 93 A VGS=10V, TC=100°C 3
Continuous drain current (VGS=10V, TA=25°C) ID 29 A VGS=10V, TA=25°C, RTHJA=40°C/W 3
Pulsed drain current ID,pulse 484 A TA=25°C 3
Avalanche energy, single pulse EAS 167 mJ ID=70A, RGS=25Ω 3
Gate source voltage VGS -20 20 V 3
Power dissipation (TC=25°C) Ptot 150 W TC=25°C 3
Power dissipation (TA=25°C) Ptot 3.8 W TA=25°C, RTHJA=40°C/W 3
Operating and storage temperature Tj,Tstg -55 175 °C 3
Thermal resistance, junction - case RthJC 1 °C/W 3
Thermal resistance, junction - ambient, 6 cm² cooling area RthJA 40 °C/W 6 cm² cooling area (footnote 2) 3
Thermal resistance, junction - ambient, minimal footprint RthJA 62 °C/W minimal footprint 3
Drain-source breakdown voltage V(BR)DSS 40 V VGS=0V, ID=1mA 4
Gate threshold voltage VGS(th) 2.1 2.8 3.4 V VDS=VGS, ID=81µA 4
Zero gate voltage drain current (Tj=25°C) IDSS 0.1 1 µA VDS=40V, VGS=0V, Tj=25°C 4
Zero gate voltage drain current (Tj=125°C) IDSS 10 100 µA VDS=40V, VGS=0V, Tj=125°C 4
Gate-source leakage current IGSS 10 100 nA VGS=20V, VDS=0V 4
Drain-source on-state resistance (VGS=10V) RDS(on) 2.1 2.6 mΩ VGS=10V, ID=70A 4
Drain-source on-state resistance (VGS=6V) RDS(on) 2.3 3.2 mΩ VGS=6V, ID=35A 4
Transconductance gfs 120 S /VDS/≥2/ID/RDS(on)max, ID=70A 4
Gate charge total Qg 68 102 nC VDD=20V, ID=70A, VGS=0 to 10V 4
Diode continuous forward current IS 94 A TC=25°C 5
Diode pulse current IS,pulse 484 A TC=25°C 5
Diode forward voltage VSD 0.88 1.1 V VGS=0V, IF=70A, Tj=25°C 5

CAD (KiCad official)

  • Symbol: IPP026N04NF2S
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)
  • 3D model files: ipp026n04nf2s-etched.step / ipp026n04nf2s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipp026n04nf2s.step / ipp026n04nf2s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 a08394c0d8ada06b, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF