component
IPP023N10N5
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IPP023N10N5
Infineon Technologies · MOSFETs · TO-220-3
IPP023N10N5 from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal; the gate-source voltage is rated from -20 V to 20 V (Table 2, page 3). |
| 2 | Drain | passive | Drain terminal, electrically connected to the mounting tab; the device is rated for VDS of 100 V and continuous drain current of 120 A at TC=25°C (pages 1 and 3). |
| 3 | Source | passive | Source terminal; the gate-source voltage limit of -20 V to 20 V (page 3) applies between the gate and this pin. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current (TC=25°C) | ID | 120 | A | TC=25°C | 3 | ||
| Continuous drain current (TC=100°C) | ID | 120 | A | TC=100°C | 3 | ||
| Pulsed drain current | ID,pulse | 480 | A | TC=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 1166 | mJ | ID=100A,RGS=25Ω | 3 | ||
| Gate source voltage | VGS | -20 | 20 | V | 3 | ||
| Power dissipation | Ptot | 375 | W | TC=25°C | 3 | ||
| Operating and storage temperature | Tj,Tstg | -55 | 175 | °C | IEC climatic category; DIN IEC 68-1: 55/175/56 | 3 | |
| Thermal resistance, junction - case | RthJC | 0.3 | 0.4 | K/W | 3 | ||
| Thermal resistance, junction - ambient, minimal footprint | RthJA | 62 | K/W | minimal footprint | 3 | ||
| Thermal resistance, junction - ambient, 6 cm2 cooling area | RthJA | 40 | K/W | 6 cm2 cooling area, device on 40 mm x 40 mm x 1.5 mm FR4 PCB, vertical in still air | 3 | ||
| Soldering temperature, wave and reflow soldering | Tsold | 260 | °C | reflow MSL1 | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V,ID=1mA | 4 | ||
| Gate threshold voltage | VGS(th) | 2.2 | 3 | 3.8 | V | VDS=VGS,ID=270µA | 4 |
| Zero gate voltage drain current (Tj=25°C) | IDSS | 0.1 | 10 | µA | VDS=100V,VGS=0V,Tj=25°C | 4 | |
| Zero gate voltage drain current (Tj=125°C) | IDSS | 7 | 100 | µA | VDS=100V,VGS=0V,Tj=125°C | 4 | |
| Gate-source leakage current | IGSS | 1 | 100 | nA | VGS=20V,VDS=0V | 4 | |
| Drain-source on-state resistance (VGS=10V) | RDS(on) | 2 | 2.3 | mΩ | VGS=10V,ID=100A | 4 | |
| Drain-source on-state resistance (VGS=6V) | RDS(on) | 2.3 | 2.8 | mΩ | VGS=6V,ID=50A | 4 | |
| Gate resistance | RG | 1.3 | 2 | Ω | 4 | ||
| Transconductance | gfs | 124 | 248 | S | /VDS/>2/ID/RDS(on)max,ID=100A | 4 | |
| Input capacitance | Ciss | 12000 | 15600 | pF | VGS=0V,VDS=50V,f=1MHz | 4 | |
| Output capacitance | Coss | 1810 | 2353 | pF | VGS=0V,VDS=50V,f=1MHz | 4 | |
| Reverse transfer capacitance | Crss | 80 | 140 | pF | VGS=0V,VDS=50V,f=1MHz | 4 | |
| Gate charge total | Qg | 168 | 210 | nC | VDD=50V,ID=100A,VGS=0to10V | 4 | |
| Gate to drain charge | Qgd | 34 | 58 | nC | VDD=50V,ID=100A,VGS=0to10V | 4 | |
| Output charge | Qoss | 213 | 283 | nC | VDD=50V,VGS=0V | 4 | |
| Diode continuous forward current | IS | 120 | A | TC=25°C | 5 | ||
| Diode pulse current | IS,pulse | 480 | A | TC=25°C | 5 | ||
| Diode forward voltage | VSD | 0.9 | 1.2 | V | VGS=0V,IF=100A,Tj=25°C | 5 | |
| Reverse recovery time | trr | 99 | 198 | ns | VR=50V,IF=IS,diF/dt=100A/µs | 5 | |
| Reverse recovery charge | Qrr | 287 | 574 | nC | VR=50V,IF=IS,diF/dt=100A/µs | 5 |
CAD (KiCad official)
- Symbol:
IPP023N10N5 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files:
ipp023n10n5-etched.step/ipp023n10n5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipp023n10n5.step/ipp023n10n5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (11 pp, sha256
5756d83989a4f7a6, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IPP023N10N5
**Infineon Technologies** · MOSFETs · TO-220-3
IPP023N10N5 from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal; the gate-source voltage is rated from -20 V to 20 V (Table 2, page 3). |
| 2 | Drain | passive | Drain terminal, electrically connected to the mounting tab; the device is rated for VDS of 100 V and continuous drain current of 120 A at TC=25°C (pages 1 and 3). |
| 3 | Source | passive | Source terminal; the gate-source voltage limit of -20 V to 20 V (page 3) applies between the gate and this pin. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current (TC=25°C) | ID | | | 120 | A | TC=25°C | 3 |
| Continuous drain current (TC=100°C) | ID | | | 120 | A | TC=100°C | 3 |
| Pulsed drain current | ID,pulse | | | 480 | A | TC=25°C | 3 |
| Avalanche energy, single pulse | EAS | | | 1166 | mJ | ID=100A,RGS=25Ω | 3 |
| Gate source voltage | VGS | -20 | | 20 | V | | 3 |
| Power dissipation | Ptot | | | 375 | W | TC=25°C | 3 |
| Operating and storage temperature | Tj,Tstg | -55 | | 175 | °C | IEC climatic category; DIN IEC 68-1: 55/175/56 | 3 |
| Thermal resistance, junction - case | RthJC | | 0.3 | 0.4 | K/W | | 3 |
| Thermal resistance, junction - ambient, minimal footprint | RthJA | | | 62 | K/W | minimal footprint | 3 |
| Thermal resistance, junction - ambient, 6 cm2 cooling area | RthJA | | | 40 | K/W | 6 cm2 cooling area, device on 40 mm x 40 mm x 1.5 mm FR4 PCB, vertical in still air | 3 |
| Soldering temperature, wave and reflow soldering | Tsold | | | 260 | °C | reflow MSL1 | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 100 | | | V | VGS=0V,ID=1mA | 4 |
| Gate threshold voltage | VGS(th) | 2.2 | 3 | 3.8 | V | VDS=VGS,ID=270µA | 4 |
| Zero gate voltage drain current (Tj=25°C) | IDSS | | 0.1 | 10 | µA | VDS=100V,VGS=0V,Tj=25°C | 4 |
| Zero gate voltage drain current (Tj=125°C) | IDSS | | 7 | 100 | µA | VDS=100V,VGS=0V,Tj=125°C | 4 |
| Gate-source leakage current | IGSS | | 1 | 100 | nA | VGS=20V,VDS=0V | 4 |
| Drain-source on-state resistance (VGS=10V) | RDS(on) | | 2 | 2.3 | mΩ | VGS=10V,ID=100A | 4 |
| Drain-source on-state resistance (VGS=6V) | RDS(on) | | 2.3 | 2.8 | mΩ | VGS=6V,ID=50A | 4 |
| Gate resistance | RG | | 1.3 | 2 | Ω | | 4 |
| Transconductance | gfs | 124 | 248 | | S | /VDS/>2/ID/RDS(on)max,ID=100A | 4 |
| Input capacitance | Ciss | | 12000 | 15600 | pF | VGS=0V,VDS=50V,f=1MHz | 4 |
| Output capacitance | Coss | | 1810 | 2353 | pF | VGS=0V,VDS=50V,f=1MHz | 4 |
| Reverse transfer capacitance | Crss | | 80 | 140 | pF | VGS=0V,VDS=50V,f=1MHz | 4 |
| Gate charge total | Qg | | 168 | 210 | nC | VDD=50V,ID=100A,VGS=0to10V | 4 |
| Gate to drain charge | Qgd | | 34 | 58 | nC | VDD=50V,ID=100A,VGS=0to10V | 4 |
| Output charge | Qoss | | 213 | 283 | nC | VDD=50V,VGS=0V | 4 |
| Diode continuous forward current | IS | | | 120 | A | TC=25°C | 5 |
| Diode pulse current | IS,pulse | | | 480 | A | TC=25°C | 5 |
| Diode forward voltage | VSD | | 0.9 | 1.2 | V | VGS=0V,IF=100A,Tj=25°C | 5 |
| Reverse recovery time | trr | | 99 | 198 | ns | VR=50V,IF=IS,diF/dt=100A/µs | 5 |
| Reverse recovery charge | Qrr | | 287 | 574 | nC | VR=50V,IF=IS,diF/dt=100A/µs | 5 |
## CAD (KiCad official)
- Symbol: `IPP023N10N5`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files: `ipp023n10n5-etched.step` / `ipp023n10n5-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipp023n10n5.step` / `ipp023n10n5.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588889130047066112) (11 pp, sha256 `5756d83989a4f7a6`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ipp023n10n5-datasheet.pdf)