component
IPP016N08NF2SAKMA1
Public Made by Adomby adom
INFINEON Global Sourcing Parts, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IPP016N08NF2SAKMA1
INFINEON · Global Sourcing Parts · TO-220-3
IPP016N08NF2SAKMA1 from INFINEON, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate pin 1 controls the MOSFET, with gate-source voltage VGS rated from -20 V to 20 V. |
| 2 | Drain | passive | Drain pin 2 is electrically tied to the metal tab and is rated for a drain-source voltage VDS of 80 V. |
| 3 | Source | passive | Source pin 3 is the MOSFET source terminal; the datasheet gives no separate pin-level limit for it. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | INFINEON |
| Package | TO-220-3 |
| Category | Global Sourcing Parts |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 196 | A | VGS=10V,TC=25°C | 3 | ||
| Continuous drain current | ID | 151 | A | VGS=10V,TC=100°C | 3 | ||
| Continuous drain current | ID | 35 | A | VGS=10V,TA=25°C,RthJA=40°C/W | 3 | ||
| Pulsed drain current | ID,pulse | 784 | A | TA=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 1125 | mJ | ID=100A,RGS=25Ω | 3 | ||
| Gate source voltage | VGS | -20 | 20 | V | 3 | ||
| Power dissipation | Ptot | 300 | W | TC=25°C | 3 | ||
| Power dissipation | Ptot | 3.8 | W | TA=25°C,RthJA=40°C/W | 3 | ||
| Operating and storage temperature | Tj,Tstg | -55 | 175 | °C | 3 | ||
| Thermal resistance, junction - case | RthJC | 0.5 | °C/W | 3 | |||
| Thermal resistance, junction - ambient, 6 cm² cooling area | RthJA | 40 | °C/W | 6 cm² cooling area | 3 | ||
| Thermal resistance, junction - ambient, minimal footprint | RthJA | 62 | °C/W | minimal footprint | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 80 | V | VGS=0V,ID=1mA | 4 | ||
| Gate threshold voltage | VGS(th) | 2.2 | 3 | 3.8 | V | VDS=VGS,ID=267µA | 4 |
| Zero gate voltage drain current | IDSS | 0.1 | 1 | µA | VDS=80V,VGS=0V,Tj=25°C | 4 | |
| Zero gate voltage drain current | IDSS | 10 | 100 | µA | VDS=80V,VGS=0V,Tj=125°C | 4 | |
| Gate-source leakage current | IGSS | 10 | 100 | nA | VGS=20V,VDS=0V | 4 | |
| Drain-source on-state resistance | RDS(on) | 1.4 | 1.65 | mΩ | VGS=10V,ID=100A | 4 | |
| Drain-source on-state resistance | RDS(on) | 1.7 | 2.2 | mΩ | VGS=6V,ID=50A | 4 | |
| Transconductance | gfs | 125 | S | /VDS/≥2/ID/RDS(on)max,ID=100A | 4 | ||
| Gate charge total | Qg | 170 | 255 | nC | VDD=40V,ID=100A,VGS=0to10V | 4 | |
| Diode continuous forward current | IS | 152 | A | TC=25°C | 5 | ||
| Diode pulse current | IS,pulse | 784 | A | TC=25°C | 5 | ||
| Diode forward voltage | VSD | 0.88 | 1.2 | V | VGS=0V,IF=100A,Tj=25°C | 5 |
CAD (KiCad official)
- Symbol:
IPP016N08NF2SAKMA1 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files:
ipp016n08nf2sakma1-etched.step/ipp016n08nf2sakma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipp016n08nf2sakma1.step/ipp016n08nf2sakma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: INFINEON datasheet (11 pp, sha256
b50e9a7337bb6365, retrieved 2026-11-02, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IPP016N08NF2SAKMA1
**INFINEON** · Global Sourcing Parts · TO-220-3
IPP016N08NF2SAKMA1 from INFINEON, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate pin 1 controls the MOSFET, with gate-source voltage VGS rated from -20 V to 20 V. |
| 2 | Drain | passive | Drain pin 2 is electrically tied to the metal tab and is rated for a drain-source voltage VDS of 80 V. |
| 3 | Source | passive | Source pin 3 is the MOSFET source terminal; the datasheet gives no separate pin-level limit for it. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | INFINEON |
| Package | TO-220-3 |
| Category | Global Sourcing Parts |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | | | 196 | A | VGS=10V,TC=25°C | 3 |
| Continuous drain current | ID | | | 151 | A | VGS=10V,TC=100°C | 3 |
| Continuous drain current | ID | | | 35 | A | VGS=10V,TA=25°C,RthJA=40°C/W | 3 |
| Pulsed drain current | ID,pulse | | | 784 | A | TA=25°C | 3 |
| Avalanche energy, single pulse | EAS | | | 1125 | mJ | ID=100A,RGS=25Ω | 3 |
| Gate source voltage | VGS | -20 | | 20 | V | | 3 |
| Power dissipation | Ptot | | | 300 | W | TC=25°C | 3 |
| Power dissipation | Ptot | | | 3.8 | W | TA=25°C,RthJA=40°C/W | 3 |
| Operating and storage temperature | Tj,Tstg | -55 | | 175 | °C | | 3 |
| Thermal resistance, junction - case | RthJC | | | 0.5 | °C/W | | 3 |
| Thermal resistance, junction - ambient, 6 cm² cooling area | RthJA | | | 40 | °C/W | 6 cm² cooling area | 3 |
| Thermal resistance, junction - ambient, minimal footprint | RthJA | | | 62 | °C/W | minimal footprint | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 80 | | | V | VGS=0V,ID=1mA | 4 |
| Gate threshold voltage | VGS(th) | 2.2 | 3 | 3.8 | V | VDS=VGS,ID=267µA | 4 |
| Zero gate voltage drain current | IDSS | | 0.1 | 1 | µA | VDS=80V,VGS=0V,Tj=25°C | 4 |
| Zero gate voltage drain current | IDSS | | 10 | 100 | µA | VDS=80V,VGS=0V,Tj=125°C | 4 |
| Gate-source leakage current | IGSS | | 10 | 100 | nA | VGS=20V,VDS=0V | 4 |
| Drain-source on-state resistance | RDS(on) | | 1.4 | 1.65 | mΩ | VGS=10V,ID=100A | 4 |
| Drain-source on-state resistance | RDS(on) | | 1.7 | 2.2 | mΩ | VGS=6V,ID=50A | 4 |
| Transconductance | gfs | 125 | | | S | /VDS/≥2/ID/RDS(on)max,ID=100A | 4 |
| Gate charge total | Qg | | 170 | 255 | nC | VDD=40V,ID=100A,VGS=0to10V | 4 |
| Diode continuous forward current | IS | | | 152 | A | TC=25°C | 5 |
| Diode pulse current | IS,pulse | | | 784 | A | TC=25°C | 5 |
| Diode forward voltage | VSD | | 0.88 | 1.2 | V | VGS=0V,IF=100A,Tj=25°C | 5 |
## CAD (KiCad official)
- Symbol: `IPP016N08NF2SAKMA1`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files: `ipp016n08nf2sakma1-etched.step` / `ipp016n08nf2sakma1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipp016n08nf2sakma1.step` / `ipp016n08nf2sakma1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [INFINEON datasheet](https://www.infineon.com/dgdl/Infineon-IPP016N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f69332aa1057) (11 pp, sha256 `b50e9a7337bb6365`, retrieved 2026-11-02, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ipp016n08nf2sakma1-datasheet.pdf)