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Ray Publish 0.1.0 a8126dd 4d ago

IPP016N08NF2SAKMA1

INFINEON · Global Sourcing Parts · TO-220-3

IPP016N08NF2SAKMA1 from INFINEON, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate pin 1 controls the MOSFET, with gate-source voltage VGS rated from -20 V to 20 V.
2 Drain passive Drain pin 2 is electrically tied to the metal tab and is rated for a drain-source voltage VDS of 80 V.
3 Source passive Source pin 3 is the MOSFET source terminal; the datasheet gives no separate pin-level limit for it.

Key specifications

Parameter Value
Manufacturer INFINEON
Package TO-220-3
Category Global Sourcing Parts
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 196 A VGS=10V,TC=25°C 3
Continuous drain current ID 151 A VGS=10V,TC=100°C 3
Continuous drain current ID 35 A VGS=10V,TA=25°C,RthJA=40°C/W 3
Pulsed drain current ID,pulse 784 A TA=25°C 3
Avalanche energy, single pulse EAS 1125 mJ ID=100A,RGS=25Ω 3
Gate source voltage VGS -20 20 V 3
Power dissipation Ptot 300 W TC=25°C 3
Power dissipation Ptot 3.8 W TA=25°C,RthJA=40°C/W 3
Operating and storage temperature Tj,Tstg -55 175 °C 3
Thermal resistance, junction - case RthJC 0.5 °C/W 3
Thermal resistance, junction - ambient, 6 cm² cooling area RthJA 40 °C/W 6 cm² cooling area 3
Thermal resistance, junction - ambient, minimal footprint RthJA 62 °C/W minimal footprint 3
Drain-source breakdown voltage V(BR)DSS 80 V VGS=0V,ID=1mA 4
Gate threshold voltage VGS(th) 2.2 3 3.8 V VDS=VGS,ID=267µA 4
Zero gate voltage drain current IDSS 0.1 1 µA VDS=80V,VGS=0V,Tj=25°C 4
Zero gate voltage drain current IDSS 10 100 µA VDS=80V,VGS=0V,Tj=125°C 4
Gate-source leakage current IGSS 10 100 nA VGS=20V,VDS=0V 4
Drain-source on-state resistance RDS(on) 1.4 1.65 mΩ VGS=10V,ID=100A 4
Drain-source on-state resistance RDS(on) 1.7 2.2 mΩ VGS=6V,ID=50A 4
Transconductance gfs 125 S /VDS/≥2/ID/RDS(on)max,ID=100A 4
Gate charge total Qg 170 255 nC VDD=40V,ID=100A,VGS=0to10V 4
Diode continuous forward current IS 152 A TC=25°C 5
Diode pulse current IS,pulse 784 A TC=25°C 5
Diode forward voltage VSD 0.88 1.2 V VGS=0V,IF=100A,Tj=25°C 5

CAD (KiCad official)

  • Symbol: IPP016N08NF2SAKMA1
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)
  • 3D model files: ipp016n08nf2sakma1-etched.step / ipp016n08nf2sakma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipp016n08nf2sakma1.step / ipp016n08nf2sakma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: INFINEON datasheet (11 pp, sha256 b50e9a7337bb6365, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF