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IPN95R2K0P7

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Infineon Technologies MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPN95R2K0P7

Infineon Technologies · MOSFETs · SOT-223

IPN95R2K0P7 from Infineon Technologies, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input MOSFET gate terminal; static VGS is limited to -20 V to 20 V and dynamic AC (f>1 Hz) to -30 V to 30 V.
2 Drain passive MOSFET drain terminal, rated for VDS of 950 V at Tj=25°C with a continuous drain current ID of 4 A at TC=25°C.
3 Source passive MOSFET source terminal, with an internal body diode whose continuous forward current IS is limited to 1.1 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-223
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current, TC=25°C ID 4 A TC=25°C 3
Continuous drain current, TC=100°C ID 2.4 A TC=100°C 3
Pulsed drain current ID,pulse 10 A TC=25°C 3
Avalanche energy, single pulse EAS 6 mJ ID=0.4A; VDD=50V; see table 10 3
Avalanche energy, repetitive EAR 0.08 mJ ID=0.4A; VDD=50V; see table 10 3
MOSFET dv/dt ruggedness dv/dt 100 V/ns VDS=0...400V 3
Gate source voltage (static) VGS -20 20 V static 3
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation Ptot 7 W TC=25°C 3
Storage temperature Tstg -55 150 °C 3
Operating junction temperature Tj -55 150 °C 3
Continuous diode forward current IS 1.1 A TC=25°C 3
Diode pulse current IS,pulse 10 A TC=25°C 3
Reverse diode dv/dt dv/dt 1 V/ns VDS=0...400V, ISD<=0.8A, Tj=25°C 3
Maximum diode commutation speed diF/dt 50 A/µs VDS=0...400V, ISD<=0.8A, Tj=25°C 3
Thermal resistance, junction - case RthJC 18.29 °C/W 4
Thermal resistance, junction - ambient RthJA 160 °C/W device on PCB, minimal footprint 4
Thermal resistance, junction - ambient for SMD version RthJA 35 75 °C/W Device on 40mm40mm1.5mm epoxy PCB FR4 with 6cm² copper area for drain connection and cooling; PCB vertical without air stream cooling 4
Soldering temperature, wave- & reflow soldering allowed Tsold 260 °C reflow MSL1 4
Drain-source breakdown voltage V(BR)DSS 950 V VGS=0V, ID=1mA 5
Gate threshold voltage V(GS)th 2.5 3 3.5 V VDS=VGS, ID=0.08mA 5
Zero gate voltage drain current, Tj=25°C IDSS 10 µA VDS=950V, VGS=0V, Tj=25°C 5
Zero gate voltage drain current, Tj=150°C IDSS 1 µA VDS=950V, VGS=0V, Tj=150°C 5
Gate-source leakage current IGSS 1000 nA VGS=20V, VDS=0V 5
Drain-source on-state resistance, Tj=25°C RDS(on) 1.71 2 Ω VGS=10V, ID=1.7A, Tj=25°C 5
Drain-source on-state resistance, Tj=150°C RDS(on) 3.817 Ω VGS=10V, ID=1.7A, Tj=150°C 5

CAD (KiCad official)

  • Symbol: IPN95R2K0P7
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: ipn95r2k0p7-etched.step / ipn95r2k0p7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipn95r2k0p7.step / ipn95r2k0p7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 39962988e306b9ec, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF