component
IPN80R900P7ATMA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| ipn80r900p7atma1-etched.glb | 13d ago |
| ipn80r900p7atma1-etched.step | 13d ago |
| ipn80r900p7atma1-hero.glb | 13d ago |
| ipn80r900p7atma1-hero.overlay.json | 13d ago |
| ipn80r900p7atma1.glb | 13d ago |
| ipn80r900p7atma1.kicad_mod | 13d ago |
| ipn80r900p7atma1.kicad_sym | 13d ago |
| ipn80r900p7atma1.lbr | 13d ago |
| ipn80r900p7atma1.step | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
IPN80R900P7ATMA1
Infineon Technologies · MOSFETs · SOT-223
IPN80R900P7ATMA1 from Infineon Technologies, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the 800 V CoolMOS P7 MOSFET, with static gate-source voltage limited to ±20 V and AC (f>1 Hz) limited to ±30 V, and an integrated Zener diode for ESD protection. |
| 2 | Drain | passive | Drain terminal, also connected to the tab, rated for V(BR)DSS of 800 V minimum and a continuous drain current of 6 A at TC=25°C. |
| 3 | Source | passive | Source terminal, the reference for the gate and drain, with a continuous body-diode forward current limit of 1.7 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 6 | A | TC=25°C | 3 | ||
| Continuous drain current | ID | 3.9 | A | TC=100°C | 3 | ||
| Pulsed drain current | ID,pulse | 14 | A | TC=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 13 | mJ | ID=0.9A; VDD=50V | 3 | ||
| Avalanche energy, repetitive | EAR | 0.11 | mJ | ID=0.9A; VDD=50V | 3 | ||
| Avalanche current, repetitive | IAR | 0.9 | A | 3 | |||
| MOSFET dv/dt ruggedness | dv/dt | 100 | V/ns | VDS=0 to 400V | 3 | ||
| Gate source voltage | VGS | -20 | 20 | V | static | 3 | |
| Gate source voltage | VGS | -30 | 30 | V | AC (f>1 Hz) | 3 | |
| Power dissipation | Ptot | 7 | W | TC=25°C | 3 | ||
| Operating and storage temperature | Tj,Tstg | -55 | 150 | °C | 3 | ||
| Continuous diode forward current | IS | 1.7 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | 14 | A | TC=25°C | 3 | ||
| Reverse diode dv/dt | dv/dt | 1 | V/ns | VDS=0 to 400V, ISD<=1.1A, Tj=25°C | 3 | ||
| Maximum diode commutation speed | dif/dt | 50 | A/µs | VDS=0 to 400V, ISD<=1.1A, Tj=25°C | 3 | ||
| Thermal resistance, junction - solder point | RthJS | 17.8 | °C/W | 3 | |||
| Thermal resistance, junction - ambient | RthJA | 160 | °C/W | Device on PCB, minimal footprint | 3 | ||
| Thermal resistance, junction - ambient, soldered on copper area | RthJA | 75 | °C/W | Device on 40mm40mm1.5mm epoxy PCB FR4 with 6cm2 copper area for drain connection and cooling; vertical, no air stream cooling | 3 | ||
| Soldering temperature, wave- & reflow soldering allowed | Tsold | 260 | °C | reflow MSL1 | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 800 | V | VGS=0V, ID=1mA | 4 | ||
| Gate threshold voltage | VGS(th) | 2.5 | 3 | 3.5 | V | VDS=VGS, ID=0.11mA | 4 |
| Gate-source leakage current incl. zener diode | IGSS | 1 | µA | VGS=20V, VDS=0V | 4 | ||
| Drain-source on-state resistance | RDS(on) | 0.77 | 0.9 | Ω | VGS=10V, ID=2.2A, Tj=25°C | 4 |
CAD (KiCad official)
- Symbol:
IPN80R900P7ATMA1 - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files:
ipn80r900p7atma1-etched.step/ipn80r900p7atma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipn80r900p7atma1.step/ipn80r900p7atma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (13 pp, sha256
f5c047ca558c84af, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).