IPN80R4K5P7ATMA1

{
  "slug": "ipn80r4k5p7atma1",
  "version": "0.1.0",
  "type": "component",
  "description": "Infineon Technologies MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "tags": [
    "component",
    "transistors-thyristors",
    "ipn80r4k5p7atma1",
    "factory-2.0.0",
    "extractor-text"
  ],
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
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    "README.md",
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    "ipn80r4k5p7atma1.kicad_mod",
    "ipn80r4k5p7atma1.glb",
    "ipn80r4k5p7atma1.step",
    "ipn80r4k5p7atma1.lbr",
    "docs/hero.png",
    "docs/ipn80r4k5p7atma1-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html",
    "ipn80r4k5p7atma1-hero.glb",
    "ipn80r4k5p7atma1-hero.overlay.json",
    "ipn80r4k5p7atma1-etched.glb"
  ],
  "component": {
    "mpn": "IPN80R4K5P7ATMA1",
    "manufacturer": "Infineon Technologies",
    "package": "SOT-223",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590319689294376960",
    "parts": {
      "symbol": "ipn80r4k5p7atma1.kicad_sym",
      "footprint": "ipn80r4k5p7atma1.kicad_mod",
      "model_3d": "ipn80r4k5p7atma1-hero.glb",
      "model_3d_plain": "ipn80r4k5p7atma1-etched.glb",
      "model_3d_step": "ipn80r4k5p7atma1-etched.step",
      "model_3d_step_plain": "ipn80r4k5p7atma1.step",
      "lbr": "ipn80r4k5p7atma1.lbr"
    },
    "distributor_links": {
      "lcsc": "C3288796"
    },
    "distributor_check": {
      "checked_at": "2026-10-18T09:25:05Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "quota"
      },
      "mouser": {
        "pn": null,
        "status": "quota"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "Gate",
        "type": "input",
        "description": "Gate of the 800 V CoolMOS P7 MOSFET, rated for gate-source voltage of -20 V to 20 V static and -30 V to 30 V for AC (f>1 Hz), with integrated Zener diode ESD protection."
      },
      {
        "number": "2",
        "name": "Drain",
        "type": "passive",
        "description": "Drain of the MOSFET, also connected to the tab; the device is rated for a minimum drain-source breakdown voltage V(BR)DSS of 800 V and a continuous drain current of 1.5 A at TC=25°C."
      },
      {
        "number": "3",
        "name": "Source",
        "type": "passive",
        "description": "Source of the MOSFET; RDS(on) is specified from drain to source at VGS=10 V, ID=0.4 A, with a maximum of 4.5 Ω at Tj=25°C."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The datasheet gives the pin mapping only as a one-line front-page caption ('Drain Pin 2, Tab Gate Pi; The datasheet does not describe the drain tab separately from pin 2; it is taken as electrically the; The MPN in the request is IPN80R4K5P7ATMA1, but the datasheet only lists IPN80R4K5P7 (Table 1 orderi"
        ],
        "pages_sent": 13,
        "cost_usd": 0.0462,
        "at": "2026-10-18T09:22:59"
      },
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        "pages": 13,
        "sha256": "abfc5ec8cba52c37",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
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      "footprint": "viewers/footprint.html"
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        "extents_mm": [
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        "zmin_mm": -0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "77ad6dbacc493cb619c728f26d2ddcf461eb0feb6b977b47d01d51e67016f654",
        "checked": "2026-10-18",
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}