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IPN80R1K4P7ATMA1

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Infineon Technologies MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsipn80r1k4p7atma1factory-2.0.0extractor-text

Verified IPN80R1K4P7ATMA1

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IPN80R1K4P7ATMA1 · SOT-223 · 3 pins
  • ✓copper: 4 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 13-page datasheet
  • ✓distributor: lcsc C3278579, digikey IPN80R1K4P7ATMA1TR-ND, mouser 726-IPN80R1K4P7ATMA1
  • ✓family: SOT-223-3_TabPin2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-yp0r3ss8/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ipn80r1k4p7atma1.kicad_sym✓ ipn80r1k4p7atma1.kicad_mod✓ ipn80r1k4p7atma1.step
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3D Model

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Symbol & Footprint

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Contents

README

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IPN80R1K4P7ATMA1

Infineon Technologies · MOSFETs · SOT-223

IPN80R1K4P7ATMA1 from Infineon Technologies, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control terminal with integrated Zener ESD protection; the datasheet limits VGS to ±20 V static and ±30 V AC (f>1 Hz).
2 Drain passive Drain terminal, also connected to the tab, rated for VDS of 800 V (V(BR)DSS minimum) and continuous drain current ID of 4 A at TC=25°C.
3 Source passive Source terminal and reference for the gate-source voltage limits of ±20 V static and ±30 V AC (f>1 Hz).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-223
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 4 A TC=25°C 3
Continuous drain current ID 2.7 A TC=100°C 3
Pulsed drain current ID,pulse 8.9 A TC=25°C 3
Avalanche energy, single pulse EAS 8 mJ ID=0.6A; VDD=50V 3
Avalanche energy, repetitive EAR 0.07 mJ ID=0.6A; VDD=50V 3
Avalanche current, repetitive IAR 0.6 A 3
MOSFET dv/dt ruggedness dv/dt 100 V/ns VDS=0 to 400V 3
Gate source voltage, static VGS -20 20 V static 3
Gate source voltage, AC VGS -30 30 V AC (f>1 Hz) 3
Power dissipation Ptot 7 W TC=25°C 3
Operating and storage temperature Tj,Tstg -55 150 °C 3
Continuous diode forward current IS 1.4 A TC=25°C 3
Diode pulse current IS,pulse 8.9 A TC=25°C 3
Reverse diode dv/dt dv/dt 1 V/ns VDS=0 to 400V, ISD<=0.7A, Tj=25°C 3
Maximum diode commutation speed dif/dt 50 A/µs VDS=0 to 400V, ISD<=0.7A, Tj=25°C 3
Thermal resistance, junction - solder point RthJS 18.7 °C/W 3
Thermal resistance, junction - ambient RthJA 160 °C/W Device on PCB, minimal footprint 3
Thermal resistance, junction - ambient, soldered on copper area RthJA 75 °C/W Device on 40mm40mm1.5mm epoxy PCB FR4 with 6cm2 copper area for drain connection and cooling; vertical, no air stream cooling 3
Soldering temperature, wave and reflow Tsold 260 °C reflow MSL1 3
Drain-source breakdown voltage V(BR)DSS 800 V VGS=0V, ID=1mA 4
Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS, ID=0.07mA 4
Zero gate voltage drain current IDSS 10 µA VDS=800V, VGS=0V, Tj=25°C 4
Zero gate voltage drain current IDSS 1 µA VDS=800V, VGS=0V, Tj=150°C 4
Gate-source leakage current incl. zener diode IGSS 1 µA VGS=20V, VDS=0V 4
Drain-source on-state resistance RDS(on) 1.2 1.4 Ω VGS=10V, ID=1.4A, Tj=25°C 4

CAD (KiCad official)

  • Symbol: IPN80R1K4P7ATMA1
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: ipn80r1k4p7atma1-etched.step / ipn80r1k4p7atma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipn80r1k4p7atma1.step / ipn80r1k4p7atma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (13 pp, sha256 ed6200a640337daa, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF