component
IPN70R750P7SATMA1
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Infineon Technologies MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IPN70R750P7SATMA1
Infineon Technologies · MOSFETs · SOT-223
IPN70R750P7SATMA1 from Infineon Technologies, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the 700 V CoolMOS P7 MOSFET; static gate-source voltage VGS is limited to -16 V to 16 V, and AC (f>1 Hz) to -30 V to 30 V, with typical gate resistance RG of 10 Ω. |
| 2 | Drain | passive | Drain terminal, also connected to the tab; continuous drain current ID is 6.5 A at TC=20°C and 4.0 A at TC=100°C, with drain-source breakdown voltage V(BR)DSS of 700 V minimum. |
| 3 | Source | passive | Source terminal; continuous diode forward current IS is limited to 2.0 A at TC=25°C, and diode pulse current IS,pulse to 15.4 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 6.5 | A | TC = 20°C | 3 | ||
| Continuous drain current | ID | 4 | A | TC = 100°C | 3 | ||
| Pulsed drain current | ID,pulse | 15.4 | A | TC=25°C | 3 | ||
| Avalanche current, single pulse (application flyback relevant) | IAS | 2 | A | Measured with standard leakage inductance of transformer of 7µH | 3 | ||
| MOSFET dv/dt ruggedness | dv/dt | 100 | V/ns | VDS=0...400V | 3 | ||
| Gate source voltage (static) | VGS | -16 | 16 | V | static | 3 | |
| Gate source voltage (AC) | VGS | -30 | 30 | V | AC (f>1 Hz) | 3 | |
| Power dissipation | Ptot | 6.7 | W | TC=25°C | 3 | ||
| Operating and storage temperature | Tj,Tstg | -40 | 150 | °C | 3 | ||
| Continuous diode forward current | IS | 2 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | 15.4 | A | TC = 25°C | 3 | ||
| Reverse diode dv/dt | dv/dt | 1 | V/ns | VDS=0...400V,ISD<=IS,Tj=25°C | 3 | ||
| Maximum diode commutation speed | dif/dt | 50 | A/µs | VDS=0...400V,ISD<=IS,Tj=25°C | 3 | ||
| Thermal resistance, junction - solder point | RthJS | 18.7 | °C/W | 3 | |||
| Thermal resistance, junction - ambient, minimal footprint | RthJA | 160 | °C/W | minimal footprint | 3 | ||
| Thermal resistance, junction - ambient, soldered on copper area | RthJA | 75 | °C/W | Device on 40mm40mm1.5 epoxy PCB FR4 with 6cm2 (one layer 70µm thick) copper area for drain connection and cooling; PCB vertical without blown air | 3 | ||
| Soldering temperature, wavesoldering only allowed at leads | Tsold | 260 | °C | reflow MSL1 | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 700 | V | VGS=0V,ID=1mA | 4 | ||
| Gate threshold voltage | V(GS)th | 2.5 | 3 | 3.5 | V | VDS=VGS,ID=0.07mA | 4 |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=700V,VGS=0V,Tj=25°C | 4 | ||
| Gate-source leakage current incl. Zener diode | IGSS | 1 | µA | VGS=20V,VDS=0V | 4 | ||
| Drain-source on-state resistance | RDS(on) | 0.62 | 0.75 | Ω | VGS=10V,ID=1.4A,Tj=25°C | 4 |
CAD (KiCad official)
- Symbol:
IPN70R750P7SATMA1 - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files:
ipn70r750p7satma1-etched.step/ipn70r750p7satma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipn70r750p7satma1.step/ipn70r750p7satma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (13 pp, sha256
e4fb27dfe5ea2f02, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IPN70R750P7SATMA1
**Infineon Technologies** · MOSFETs · SOT-223
IPN70R750P7SATMA1 from Infineon Technologies, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the 700 V CoolMOS P7 MOSFET; static gate-source voltage VGS is limited to -16 V to 16 V, and AC (f>1 Hz) to -30 V to 30 V, with typical gate resistance RG of 10 Ω. |
| 2 | Drain | passive | Drain terminal, also connected to the tab; continuous drain current ID is 6.5 A at TC=20°C and 4.0 A at TC=100°C, with drain-source breakdown voltage V(BR)DSS of 700 V minimum. |
| 3 | Source | passive | Source terminal; continuous diode forward current IS is limited to 2.0 A at TC=25°C, and diode pulse current IS,pulse to 15.4 A at TC=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | | | 6.5 | A | TC = 20°C | 3 |
| Continuous drain current | ID | | | 4 | A | TC = 100°C | 3 |
| Pulsed drain current | ID,pulse | | | 15.4 | A | TC=25°C | 3 |
| Avalanche current, single pulse (application flyback relevant) | IAS | | | 2 | A | Measured with standard leakage inductance of transformer of 7µH | 3 |
| MOSFET dv/dt ruggedness | dv/dt | | | 100 | V/ns | VDS=0...400V | 3 |
| Gate source voltage (static) | VGS | -16 | | 16 | V | static | 3 |
| Gate source voltage (AC) | VGS | -30 | | 30 | V | AC (f>1 Hz) | 3 |
| Power dissipation | Ptot | | | 6.7 | W | TC=25°C | 3 |
| Operating and storage temperature | Tj,Tstg | -40 | | 150 | °C | | 3 |
| Continuous diode forward current | IS | | | 2 | A | TC=25°C | 3 |
| Diode pulse current | IS,pulse | | | 15.4 | A | TC = 25°C | 3 |
| Reverse diode dv/dt | dv/dt | | | 1 | V/ns | VDS=0...400V,ISD<=IS,Tj=25°C | 3 |
| Maximum diode commutation speed | dif/dt | | | 50 | A/µs | VDS=0...400V,ISD<=IS,Tj=25°C | 3 |
| Thermal resistance, junction - solder point | RthJS | | | 18.7 | °C/W | | 3 |
| Thermal resistance, junction - ambient, minimal footprint | RthJA | | | 160 | °C/W | minimal footprint | 3 |
| Thermal resistance, junction - ambient, soldered on copper area | RthJA | | | 75 | °C/W | Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer 70µm thick) copper area for drain connection and cooling; PCB vertical without blown air | 3 |
| Soldering temperature, wavesoldering only allowed at leads | Tsold | | | 260 | °C | reflow MSL1 | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 700 | | | V | VGS=0V,ID=1mA | 4 |
| Gate threshold voltage | V(GS)th | 2.5 | 3 | 3.5 | V | VDS=VGS,ID=0.07mA | 4 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS=700V,VGS=0V,Tj=25°C | 4 |
| Gate-source leakage current incl. Zener diode | IGSS | | | 1 | µA | VGS=20V,VDS=0V | 4 |
| Drain-source on-state resistance | RDS(on) | | 0.62 | 0.75 | Ω | VGS=10V,ID=1.4A,Tj=25°C | 4 |
## CAD (KiCad official)
- Symbol: `IPN70R750P7SATMA1`
- Footprint: `Package_TO_SOT_SMD:SOT-223-3_TabPin2`
- 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files: `ipn70r750p7satma1-etched.step` / `ipn70r750p7satma1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipn70r750p7satma1.step` / `ipn70r750p7satma1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8581110450974474240) (13 pp, sha256 `e4fb27dfe5ea2f02`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ipn70r750p7satma1-datasheet.pdf)