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Ray Publish 0.1.0 db30791 12d ago

IPN70R360P7SATMA1

Infineon Technologies · MOSFETs · SOT-223

IPN70R360P7SATMA1 from Infineon Technologies, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate input with a static gate-source voltage rating of -16 V to 16 V and an AC (f>1 Hz) rating of -30 V to 30 V.
2 Drain passive Drain terminal, also connected to the tab, rated for a drain-source voltage of 700 V at Tj=25°C with a continuous drain current of 12.5 A at TC=20°C.
3 Source passive Source terminal and reference for the gate, with a continuous diode forward current of 3.0 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-223
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 12.5 A TC = 20°C 3
Continuous drain current ID 7.5 A TC = 100°C 3
Pulsed drain current ID,pulse 34 A TC=25°C 3
Avalanche current, single pulse IAS 4.5 A Application (Flyback) relevant; measured with standard leakage inductance of transformer of 10µH 3
MOSFET dv/dt ruggedness dv/dt 100 V/ns VDS=0...400V 3
Gate source voltage static VGS -16 16 V static 3
Gate source voltage AC VGS -30 30 V AC (f>1 Hz) 3
Power dissipation Ptot 7.2 W TC=25°C 3
Operating and storage temperature Tj,Tstg -40 150 °C 3
Continuous diode forward current IS 3 A TC=25°C 3
Diode pulse current IS,pulse 34 A TC = 25°C 3
Reverse diode dv/dt dv/dt 1 V/ns VDS=0...400V,ISD<=IS,Tj=25°C 3
Maximum diode commutation speed dif/dt 50 A/µs VDS=0...400V,ISD<=IS,Tj=25°C 3
Drain-source breakdown voltage V(BR)DSS 700 V VGS=0V,ID=1mA 4
Gate threshold voltage V(GS)th 2.5 3 3.5 V VDS=VGS,ID=0.15mA 4
Zero gate voltage drain current IDSS 1 µA VDS=700V,VGS=0V,Tj=25°C 4
Gate-source leakage current incl. Zener diode IGSS 1 µA VGS=20V,VDS=0V 4
Drain-source on-state resistance RDS(on) 0.3 0.36 Ω VGS=10V,ID=3A,Tj=25°C 4
Thermal resistance, junction - solder point RthJS 17.3 °C/W 3
Thermal resistance, junction - ambient for minimal footprint RthJA 160 °C/W minimal footprint 3
Thermal resistance, junction - ambient soldered on copper area RthJA 75 °C/W Device on 40mm40mm1.5 epoxy PCB FR4 with 6cm2 (one layer 70µm thick) copper area for drain connection and cooling. PCB is vertical without blown air. 3
Soldering temperature, wavesoldering only allowed at leads Tsold 260 °C reflow MSL1 3

CAD (KiCad official)

  • Symbol: IPN70R360P7SATMA1
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: ipn70r360p7satma1-etched.step / ipn70r360p7satma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipn70r360p7satma1.step / ipn70r360p7satma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (13 pp, sha256 ea6eefc410cd78f3, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF