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IPN60R1K5CEATMA1

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Infineon Technologies MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPN60R1K5CEATMA1

Infineon Technologies · MOSFETs · SOT-223

IPN60R1K5CEATMA1 from Infineon Technologies, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the 600 V CoolMOS CE MOSFET, with gate threshold VGS(th) of 2.50 to 3.50 V and static gate-source voltage limited to -20 V to 20 V (±30 V for AC, f > 1 Hz).
2 Drain passive Drain of the MOSFET, rated for VDS(max) of 600 V breakdown minimum at Tj 25 °C and continuous drain current of 5 A at TC = 25 °C (3.2 A at TC = 100 °C).
3 Source passive Source of the MOSFET, the reference for gate drive, with continuous diode forward current limited to 1.2 A at TC = 25 °C and diode pulse current to 8.4 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-223
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current (TC = 25°C) ID 5 A TC = 25°C 3
Continuous drain current (TC = 100°C) ID 3.2 A TC = 100°C 3
Pulsed drain current ID,pulse 8.4 A TC = 25°C 3
Avalanche energy, single pulse EAS 26 mJ ID = 0.6A; VDD = 50V 3
Avalanche energy, repetitive EAR 0.09 mJ ID = 0.6A; VDD = 50V 3
Avalanche current, repetitive IAR 0.6 A 3
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS = 0...480V 3
Gate source voltage (static) VGS -20 20 V static 3
Gate source voltage (AC, f > 1 Hz) VGS -30 30 V AC (f > 1 Hz) 3
Power dissipation Ptot 5 W TC = 25°C 3
Operating and storage temperature Tj,Tstg -40 150 °C 3
Continuous diode forward current IS 1.2 A TC = 25°C 3
Diode pulse current IS,pulse 8.4 A TC = 25°C 3
Reverse diode dv/dt dv/dt 15 V/ns VDS = 0...400V, ISD <= IS, Tj = 25°C 3
Maximum diode commutation speed dif/dt 500 A/µs VDS = 0...400V, ISD <= IS, Tj = 25°C 3
Thermal resistance, junction - solder point RthJS 24 °C/W 3
Thermal resistance, junction - ambient, minimal footprint RthJA 160 °C/W minimal footprint 3
Thermal resistance, junction - ambient, soldered on copper area RthJA 75 °C/W 40mm40mm1.5 epoxy PCB FR4 with 6cm2 copper area (70µm), vertical, no blown air 3
Soldering temperature, wave soldering (leads only) / reflow MSL3 Tsold 260 °C reflow MSL3 3
Drain-source breakdown voltage V(BR)DSS 600 V VGS = 0V, ID = 0.25mA 4
Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS = VGS, ID = 0.09mA 4
Zero gate voltage drain current (Tj = 25°C) IDSS 10 µA VDS = 600V, VGS = 0V, Tj = 25°C 4
Zero gate voltage drain current (Tj = 150°C) IDSS 1 µA VDS = 600V, VGS = 0V, Tj = 150°C 4
Gate-source leakage current IGSS 100 nA VGS = 20V, VDS = 0V 4
Drain-source on-state resistance (Tj = 25°C) RDS(on) 1.35 1.5 Ω VGS = 10V, ID = 1.1A, Tj = 25°C 4
Drain-source on-state resistance (Tj = 150°C) RDS(on) 3.51 Ω VGS = 10V, ID = 1.1A, Tj = 150°C 4

CAD (KiCad official)

  • Symbol: IPN60R1K5CEATMA1
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: ipn60r1k5ceatma1-etched.step / ipn60r1k5ceatma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipn60r1k5ceatma1.step / ipn60r1k5ceatma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (13 pp, sha256 a89436d8e64e31ac, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF