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IPN60R1K0CE

Infineon Technologies · MOSFETs · SOT-223

IPN60R1K0CE from Infineon Technologies, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal with gate-source voltage limited to -20 V to 20 V static and -30 V to 30 V for AC (f>1 Hz), and the datasheet recommends ferrite beads on the gate or separate totem poles when paralleling MOSFETs.
2 Drain passive Drain terminal with a minimum drain-source breakdown voltage of 600 V (VGS=0V, ID=0.25mA) and continuous drain current of 6.8 A at TC=25°C.
3 Source passive Source terminal, the reference for the gate-source voltage limits of -20 V to 20 V static and -30 V to 30 V AC (f>1 Hz).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-223
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 6.8 A TC = 25°C 3
Continuous drain current ID 4.3 A TC = 100°C 3
Pulsed drain current ID,pulse 11.8 A TC = 25°C 3
Avalanche energy, single pulse EAS 46 mJ ID = 0.8A; VDD = 50V 3
Avalanche energy, repetitive EAR 0.13 mJ ID = 0.8A; VDD = 50V 3
Avalanche current, repetitive IAR 0.8 A 3
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...480V 3
Gate source voltage (static) VGS -20 20 V static 3
Gate source voltage (AC) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation Ptot 5 W TC=25°C 3
Operating and storage temperature Tj,Tstg -40 150 °C 3
Continuous diode forward current IS 1.4 A TC=25°C 3
Diode pulse current IS,pulse 11.8 A TC = 25°C 3
Reverse diode dv/dt dv/dt 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C 3
Maximum diode commutation speed dif/dt 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C 3
Drain-source breakdown voltage V(BR)DSS 600 V VGS=0V,ID=0.25mA 4
Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS,ID=0.13mA 4
Zero gate voltage drain current IDSS 10 µA VDS=600V,VGS=0V,Tj=25°C 4
Zero gate voltage drain current IDSS 1 µA VDS=600V,VGS=0V,Tj=150°C 4
Gate-source leakage current IGSS 100 nA VGS=20V,VDS=0V 4
Drain-source on-state resistance RDS(on) 0.9 1 Ω VGS=10V,ID=1.5A,Tj=25°C 4
Thermal resistance, junction - solder point RthJS 23.2 °C/W 3
Thermal resistance, junction - ambient, minimal footprint RthJA 160 °C/W minimal footprint 3
Thermal resistance, junction - ambient, soldered on copper area RthJA 75 °C/W Device on 40mm40mm1.5 epoxy PCB FR4 with 6cm2 copper area for drain connection and cooling, vertical without blown air 3
Soldering temperature, wavesoldering Tsold 260 °C only allowed at leads, reflow MSL3 3

CAD (KiCad official)

  • Symbol: IPN60R1K0CE
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: ipn60r1k0ce-etched.step / ipn60r1k0ce-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipn60r1k0ce.step / ipn60r1k0ce.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (13 pp, sha256 75eb763bc9dcd6bb, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF