IPG20N06S4L-26-HXY

{
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  "type": "component",
  "slug": "ipg20n06s4l-26-hxy",
  "title": "IPG20N06S4L-26-HXY",
  "brief": "HXY MOSFET MOSFETs, DFN-8(5x6). Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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  "component": {
    "mpn": "IPG20N06S4L-26-HXY",
    "manufacturer": "HXY MOSFET",
    "package": "DFN-8(5x6)",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590907845938933760",
    "parts": {
      "symbol": "ipg20n06s4l-26-hxy.kicad_sym",
      "footprint": "ipg20n06s4l-26-hxy.kicad_mod",
      "model_3d": "ipg20n06s4l-26-hxy-etched.glb",
      "model_3d_plain": "ipg20n06s4l-26-hxy.glb",
      "model_3d_step": "ipg20n06s4l-26-hxy-etched.step",
      "model_3d_step_plain": "ipg20n06s4l-26-hxy.step",
      "lbr": "ipg20n06s4l-26-hxy.lbr"
    },
    "distributor_links": {},
    "pins": [
      {
        "number": "1",
        "name": "S1",
        "type": "passive",
        "description": "Source of MOSFET #1. Reference terminal for VGS1 and current return for channel 1 (rated up to 50 A continuous @ TC=25 °C)."
      },
      {
        "number": "2",
        "name": "G1",
        "type": "input",
        "description": "Gate of MOSFET #1. VGS(th)=1.0-2.5 V, VGSS max ±20 V, drive at VGS=10 V for full enhancement (RDS(on) typ 11 mΩ)."
      },
      {
        "number": "3",
        "name": "S2",
        "type": "passive",
        "description": "Source of MOSFET #2. Reference terminal for VGS2 and current return for channel 2 (rated up to 50 A continuous @ TC=25 °C)."
      },
      {
        "number": "4",
        "name": "G2",
        "type": "input",
        "description": "Gate of MOSFET #2. VGS(th)=1.0-2.5 V, VGSS max ±20 V, drive at VGS=10 V for full enhancement (RDS(on) typ 11 mΩ)."
      },
      {
        "number": "5",
        "name": "D2",
        "type": "passive",
        "description": "Drain of MOSFET #2 (shared pad with pin 6, forms the thermal/current-carrying tab). VDSS=60 V, ID=50 A. Body diode VSD ≤ 1.2 V @ 30 A."
      },
      {
        "number": "6",
        "name": "D2",
        "type": "passive",
        "description": "Drain of MOSFET #2 (shared pad with pin 5). Ties to the same drain tab; solder both for full current and thermal performance."
      },
      {
        "number": "7",
        "name": "D1",
        "type": "passive",
        "description": "Drain of MOSFET #1 (shared pad with pin 8, forms the thermal/current-carrying tab). VDSS=60 V, ID=50 A. Body diode VSD ≤ 1.2 V @ 30 A."
      },
      {
        "number": "8",
        "name": "D1",
        "type": "passive",
        "description": "Drain of MOSFET #1 (shared pad with pin 7). Ties to the same drain tab; solder both for full current and thermal performance."
      }
    ],
    "provenance": {
      "extractor": "ds2sf",
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590907845938933760",
        "pages": null,
        "sha256": "89bc62ca8627eb6a",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 8,
        "described": 8,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
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        "file": "ipg20n06s4l-26-hxy.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          6.0,
          4.98,
          0.92
        ],
        "zmin_mm": 0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "13e5a2a05f78c2a0952534b2fb187d0be154d366a431374e398c7e2032779f1b",
        "checked": "2026-10-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "ipg20n06s4l-26-hxy-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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        "zmin_mm": 0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "889c85e9dc2ed807f926132b653164a277144cb3ed527bba08198026a76809ec",
        "checked": "2026-10-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "HXY MOSFET",
      "Package": "DFN-8(5x6)",
      "Category": "Transistors/Thyristors",
      "Pins": "8"
    }
  },
  "variants": [
    {
      "mpn": "IPG20N06S4L-26-HXY",
      "kind": "packaging"
    }
  ],
  "sections": [
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    "viewers",
    "readme",
    "breadcrumbs",
    "info"
  ],
  "discovery_triggers": [
    "ipg20n06s4l-26-hxy"
  ],
  "discovery_pitch": "IPG20N06S4L-26-HXY (HXY MOSFET) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
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  "files": [
    "page.json",
    "README.md",
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    "ipg20n06s4l-26-hxy.glb",
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    "viewers/symbol.html",
    "viewers/footprint.html"
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  "visibility": {
    "public": true
  },
  "updated_at": "2026-09-24T22:49:00.069Z"
}