component
IPG20N06S4L-26-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN-8(5x6). Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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IPG20N06S4L-26-HXY
HXY MOSFET · MOSFETs · DFN-8(5x6)
IPG20N06S4L-26-HXY from HXY MOSFET, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET #1. Reference terminal for VGS1 and current return for channel 1 (rated up to 50 A continuous @ TC=25 °C). |
| 2 | G1 | input | Gate of MOSFET #1. VGS(th)=1.0-2.5 V, VGSS max ±20 V, drive at VGS=10 V for full enhancement (RDS(on) typ 11 mΩ). |
| 3 | S2 | passive | Source of MOSFET #2. Reference terminal for VGS2 and current return for channel 2 (rated up to 50 A continuous @ TC=25 °C). |
| 4 | G2 | input | Gate of MOSFET #2. VGS(th)=1.0-2.5 V, VGSS max ±20 V, drive at VGS=10 V for full enhancement (RDS(on) typ 11 mΩ). |
| 5 | D2 | passive | Drain of MOSFET #2 (shared pad with pin 6, forms the thermal/current-carrying tab). VDSS=60 V, ID=50 A. Body diode VSD ≤ 1.2 V @ 30 A. |
| 6 | D2 | passive | Drain of MOSFET #2 (shared pad with pin 5). Ties to the same drain tab; solder both for full current and thermal performance. |
| 7 | D1 | passive | Drain of MOSFET #1 (shared pad with pin 8, forms the thermal/current-carrying tab). VDSS=60 V, ID=50 A. Body diode VSD ≤ 1.2 V @ 30 A. |
| 8 | D1 | passive | Drain of MOSFET #1 (shared pad with pin 7). Ties to the same drain tab; solder both for full current and thermal performance. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 8 |
Ordering variants
Same part, different packaging or reel option.
IPG20N06S4L-26-HXY
CAD (KiCad official)
- Symbol:
IPG20N06S4L-26-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
ipg20n06s4l-26-hxy-etched.step/ipg20n06s4l-26-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipg20n06s4l-26-hxy.step/ipg20n06s4l-26-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (None pp, sha256
89bc62ca8627eb6a, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IPG20N06S4L-26-HXY
**HXY MOSFET** · MOSFETs · DFN-8(5x6)
IPG20N06S4L-26-HXY from HXY MOSFET, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET #1. Reference terminal for VGS1 and current return for channel 1 (rated up to 50 A continuous @ TC=25 °C). |
| 2 | G1 | input | Gate of MOSFET #1. VGS(th)=1.0-2.5 V, VGSS max ±20 V, drive at VGS=10 V for full enhancement (RDS(on) typ 11 mΩ). |
| 3 | S2 | passive | Source of MOSFET #2. Reference terminal for VGS2 and current return for channel 2 (rated up to 50 A continuous @ TC=25 °C). |
| 4 | G2 | input | Gate of MOSFET #2. VGS(th)=1.0-2.5 V, VGSS max ±20 V, drive at VGS=10 V for full enhancement (RDS(on) typ 11 mΩ). |
| 5 | D2 | passive | Drain of MOSFET #2 (shared pad with pin 6, forms the thermal/current-carrying tab). VDSS=60 V, ID=50 A. Body diode VSD ≤ 1.2 V @ 30 A. |
| 6 | D2 | passive | Drain of MOSFET #2 (shared pad with pin 5). Ties to the same drain tab; solder both for full current and thermal performance. |
| 7 | D1 | passive | Drain of MOSFET #1 (shared pad with pin 8, forms the thermal/current-carrying tab). VDSS=60 V, ID=50 A. Body diode VSD ≤ 1.2 V @ 30 A. |
| 8 | D1 | passive | Drain of MOSFET #1 (shared pad with pin 7). Ties to the same drain tab; solder both for full current and thermal performance. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Ordering variants
Same part, different packaging or reel option.
- `IPG20N06S4L-26-HXY`
## CAD (KiCad official)
- Symbol: `IPG20N06S4L-26-HXY`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `ipg20n06s4l-26-hxy-etched.step` / `ipg20n06s4l-26-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipg20n06s4l-26-hxy.step` / `ipg20n06s4l-26-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590907845938933760) (None pp, sha256 `89bc62ca8627eb6a`, retrieved 2026-08-17, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ipg20n06s4l-26-hxy-datasheet.pdf)