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IPF017N08NF2SATMA1

Public Made by Adom

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Infineon Technologies MOSFETs, TO-263-7. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistoripf017n08nf2satma1factory-2.0.0extractor-text

Verified IPF017N08NF2SATMA1

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier mfr, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IPF017N08NF2SATMA1 · TO-263-7 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 11-page datasheet
  • ✓distributor: lcsc C3276984, digikey 448-IPF017N08NF2SATMA1TR-ND, mouser 726-IPF017N08NF2SATM
  • ✓family: TO-263-7_TabPin8
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-1qhlfe6d/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ipf017n08nf2satma1.kicad_sym✓ ipf017n08nf2satma1.kicad_mod✓ ipf017n08nf2satma1.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 4d ago
viewers ipf017n08nf2satma1: viewers · Ray 4d ago
ipf017n08nf2satma1-etched.glb Publish 0.1.0 · Ray 4d ago
ipf017n08nf2satma1-etched.step ipf017n08nf2satma1: factory component page (tier=mfr) · Ray 4d ago
ipf017n08nf2satma1-hero.glb ipf017n08nf2satma1: hero GLB from the etched model (keeps the MPN mark) · Ray 4d ago
ipf017n08nf2satma1-hero.overlay.json Publish 0.1.0 · Ray 4d ago
ipf017n08nf2satma1.glb Publish 0.1.0 · Ray 4d ago
ipf017n08nf2satma1.kicad_mod Publish 0.1.0 · Ray 4d ago
ipf017n08nf2satma1.kicad_sym Publish 0.1.0 · Ray 4d ago
ipf017n08nf2satma1.lbr Publish 0.1.0 · Ray 4d ago
ipf017n08nf2satma1.step Publish 0.1.0 · Ray 4d ago
package.json Publish 0.1.0 · Ray 4d ago
page.json Set visibility: public · Ray 4d ago
README.md Publish 0.1.0 · Ray 4d ago
verification.json Verified: Published by the parts factory: tier mfr, 8 pins · Ray 4d ago

IPF017N08NF2SATMA1

Infineon Technologies · MOSFETs · TO-263-7

IPF017N08NF2SATMA1 from Infineon Technologies, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate pin of the N-channel MOSFET, with VGS rated from -20 V to 20 V.
2 Source passive Source connection of the MOSFET, one of the source pins 2, 3, 5, 6 and 7 (continuous drain current up to 259 A at TC=25°C).
3 Source passive Source connection of the MOSFET, one of the source pins 2, 3, 5, 6 and 7 (continuous drain current up to 259 A at TC=25°C).
4 Drain passive Drain pin of the MOSFET, connected to the tab, with VDS of 80 V.
5 Source passive Source connection of the MOSFET, one of the source pins 2, 3, 5, 6 and 7 (continuous drain current up to 259 A at TC=25°C).
6 Source passive Source connection of the MOSFET, one of the source pins 2, 3, 5, 6 and 7 (continuous drain current up to 259 A at TC=25°C).
7 Source passive Source connection of the MOSFET, one of the source pins 2, 3, 5, 6 and 7 (continuous drain current up to 259 A at TC=25°C).
8 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-263-7
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 80 V VGS=0V, ID=1mA 4
Gate threshold voltage VGS(th) 2.2 3 3.8 V VDS=VGS, ID=194µA 4
Zero gate voltage drain current IDSS 0.1 1 µA VDS=80V, VGS=0V, Tj=25°C 4
Zero gate voltage drain current IDSS 10 100 µA VDS=80V, VGS=0V, Tj=125°C 4
Gate-source leakage current IGSS 10 100 nA VGS=20V, VDS=0V 4
Drain-source on-state resistance RDS(on) 1.4 1.7 mΩ VGS=10V, ID=100A 4
Drain-source on-state resistance RDS(on) 1.8 2.4 mΩ VGS=6V, ID=50A 4
Transconductance gfs 112 S /VDS/≥2/ID/RDS(on)max, ID=100A 4
Gate charge total Qg 124 186 nC VDD=40V, ID=100A, VGS=0 to 10V 4
Diode continuous forward current IS 181 A TC=25°C 5
Diode pulse current IS,pulse 1036 A TC=25°C 5
Diode forward voltage VSD 0.87 1.2 V VGS=0V, IF=100A, Tj=25°C 5
Continuous drain current ID 259 A VGS=10V, TC=25°C 3
Continuous drain current ID 193 A VGS=10V, TC=100°C 3
Continuous drain current ID 162 A VGS=6V, TC=100°C 3
Continuous drain current ID 33 A VGS=10V, TA=25°C, RthJA=40°C/W 3
Pulsed drain current ID,pulse 1036 A TA=25°C 3
Avalanche energy, single pulse EAS 593 mJ ID=100A, RGS=25Ω 3
Gate source voltage VGS -20 20 V 3
Power dissipation Ptot 250 W TC=25°C 3
Power dissipation Ptot 3.8 W TA=25°C, RthJA=40°C/W 3
Operating and storage temperature Tj,Tstg -55 175 °C 3
Thermal resistance, junction - case RthJC 0.6 °C/W 3
Thermal resistance, junction - ambient, 6 cm² cooling area RthJA 40 °C/W 6 cm² cooling area 3
Thermal resistance, junction - ambient, minimal footprint RthJA 62 °C/W minimal footprint 3
Gate resistance RG 1.2 Ω 4
Input capacitance Ciss 8700 pF VGS=0V, VDS=40V, f=1MHz 4
Output capacitance Coss 1400 pF VGS=0V, VDS=40V, f=1MHz 4
Reverse transfer capacitance Crss 61 pF VGS=0V, VDS=40V, f=1MHz 4
Turn-on delay time td(on) 21 ns VDD=40V, VGS=10V, ID=100A, RG,ext=1.6Ω 4
Rise time tr 62 ns VDD=40V, VGS=10V, ID=100A, RG,ext=1.6Ω 4
Turn-off delay time td(off) 50 ns VDD=40V, VGS=10V, ID=100A, RG,ext=1.6Ω 4
Fall time tf 26 ns VDD=40V, VGS=10V, ID=100A, RG,ext=1.6Ω 4
Output charge Qoss 145 nC VDS=40V, VGS=0V 4
Reverse recovery time trr 44 ns VR=40V, IF=100A, diF/dt=500A/µs 5
Reverse recovery charge Qrr 285 nC VR=40V, IF=100A, diF/dt=500A/µs 5

CAD (KiCad official)

  • Symbol: IPF017N08NF2SATMA1
  • Footprint: Package_TO_SOT_SMD:TO-263-7_TabPin8
  • 3D model: TO-263-7 (KiCad packages3D, STEP)
  • 3D model files: ipf017n08nf2satma1-etched.step / ipf017n08nf2satma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipf017n08nf2satma1.step / ipf017n08nf2satma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 ef0a8db9cd0cb071, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF