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IPD90P04P405

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Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPD90P04P405

Infineon Technologies · MOSFETs · TO-252

IPD90P04P405 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the P-channel MOSFET; gate-source voltage is rated at ±20 V (VGS).
2 Drain passive Drain of the device, electrically connected to the Tab; continuous drain current is -90 A at TC=25°C with VGS=-10 V, and current is limited by the bondwire.
3 Source passive Source of the device, the reference terminal for the gate-source voltage rated at ±20 V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current, TC=25°C ID -90 A TC=25°C, VGS=-10V 1
Continuous drain current, TC=100°C ID -90 A TC=100°C, VGS=-10V 1
Pulsed drain current ID,pulse -360 A TC=25°C 1
Avalanche energy, single pulse EAS 60 mJ ID=-45A 1
Avalanche current, single pulse IAS -90 A 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 125 W TC=25°C 1
Operating and storage temperature Tj, Tstg -55 175 °C 1
Thermal resistance, junction - case RthJC 1.2 K/W 2
Thermal resistance, junction - ambient, SMD device on PCB RthJA 62 K/W minimal footprint 2
Thermal resistance, junction - ambient, SMD device on PCB RthJA 40 K/W 6 cm2 cooling area 2
Drain-source breakdown voltage V(BR)DSS -40 V VGS=0V, ID=-1mA 2
Gate threshold voltage VGS(th) -2 -3 -4 V VDS=VGS, ID=-250µA 2
Zero gate voltage drain current, Tj=25°C IDSS -0.05 -1 µA VDS=-32V, VGS=0V, Tj=25°C 2
Zero gate voltage drain current, Tj=125°C IDSS -20 -200 µA VDS=-32V, VGS=0V, Tj=125°C 2
Gate-source leakage current IGSS -100 nA VGS=-20V, VDS=0V 2
Drain-source on-state resistance RDS(on) 3.5 4.7 mΩ VGS=-10V, ID=-90A 2
Input capacitance Ciss 7900 10300 pF VGS=0V, VDS=-25V, f=1MHz 3
Output capacitance Coss 2800 3600 pF VGS=0V, VDS=-25V, f=1MHz 3
Reverse transfer capacitance Crss 76 150 pF VGS=0V, VDS=-25V, f=1MHz 3
Gate to source charge Qgs 46 60 nC VDD=-32V, ID=-90A, VGS=0 to -10V, TC=25°C 3
Gate to drain charge Qgd 21 42 nC VDD=-32V, ID=-90A, VGS=0 to -10V, TC=25°C 3
Gate charge total Qg 118 154 nC VDD=-32V, ID=-90A, VGS=0 to -10V, TC=25°C 3
Diode continuous forward current IS -90 A 3
Diode pulse current IS,pulse -360 A 3
Diode forward voltage VSD -1 -1.3 V VGS=0V, IF=-90A, Tj=25°C 3

CAD (KiCad official)

  • Symbol: IPD90P04P405
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ipd90p04p405-etched.step / ipd90p04p405-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd90p04p405.step / ipd90p04p405.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 131880b0ed68e74c, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF