component
IPD90P03P4L04ATMA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IPD90P03P4L04ATMA1
Infineon Technologies · MOSFETs · TO-252
IPD90P03P4L04ATMA1 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin of the P-channel logic-level MOSFET; VGS rated +5/-16 V, threshold -1.0 to -2.0 V (typ. -1.5 V) at ID=-253µA. |
| 2 | D | passive | Drain pin, connected internally to the tab; VDS -30 V, continuous drain current -90 A at TC=25°C. |
| 3 | S | passive | Source pin of the P-channel MOSFET; RDS(on) max 4.1 mΩ at VGS=-10V, ID=-90A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current (TC=25°C) | ID | -90 | A | TC=25°C, VGS=-10V | 1 | ||
| Continuous drain current (TC=100°C) | ID | -90 | A | TC=100°C, VGS=-10V | 1 | ||
| Pulsed drain current | ID,pulse | -360 | A | TC=25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 370 | mJ | ID=-45A | 1 | ||
| Avalanche current, single pulse | IAS | -90 | A | single pulse | 1 | ||
| Gate source voltage | VGS | -16 | 5 | V | 1 | ||
| Power dissipation | Ptot | 137 | W | TC=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Thermal resistance, junction - case | RthJC | 1.1 | K/W | 2 | |||
| Thermal resistance, junction - ambient, SMD on PCB, minimal footprint | RthJA | 62 | K/W | SMD version, device on PCB, minimal footprint | 2 | ||
| Thermal resistance, junction - ambient, SMD on PCB, 6 cm2 cooling area | RthJA | 40 | K/W | SMD version, device on PCB, 6 cm2 cooling area | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | -30 | V | VGS=0V, ID=-1mA | 2 | ||
| Gate threshold voltage | VGS(th) | -1 | -1.5 | -2 | V | VDS=VGS, ID=-253µA | 2 |
| Zero gate voltage drain current (Tj=25°C) | IDSS | -0.05 | -1 | µA | VDS=-24V, VGS=0V, Tj=25°C | 2 | |
| Zero gate voltage drain current (Tj=125°C) | IDSS | -20 | -200 | µA | VDS=-24V, VGS=0V, Tj=125°C | 2 | |
| Gate-source leakage current | IGSS | -100 | nA | VGS=-16V, VDS=0V | 2 | ||
| Drain-source on-state resistance (VGS=-4.5V) | RDS(on) | 5.1 | 6.8 | mΩ | VGS=-4.5V, ID=-90A | 2 | |
| Drain-source on-state resistance (VGS=-10V) | RDS(on) | 3.3 | 4.1 | mΩ | VGS=-10V, ID=-90A | 2 | |
| Input capacitance | Ciss | 8670 | 11300 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 | |
| Output capacitance | Coss | 2350 | 3050 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 | |
| Reverse transfer capacitance | Crss | 65 | 130 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 | |
| Gate to source charge | Qgs | 29 | 38 | nC | VDD=-24V, ID=-90A, VGS=0 to -10V | 3 | |
| Gate to drain charge | Qgd | 15 | 30 | nC | VDD=-24V, ID=-90A, VGS=0 to -10V | 3 | |
| Gate charge total | Qg | 125 | 160 | nC | VDD=-24V, ID=-90A, VGS=0 to -10V | 3 | |
| Diode continuous forward current | IS | -90 | A | 3 | |||
| Diode pulse current | IS,pulse | -360 | A | 3 | |||
| Diode forward voltage | VSD | -1.3 | V | VGS=0V, IF=-90A, Tj=25°C | 3 |
CAD (KiCad official)
- Symbol:
IPD90P03P4L04ATMA1 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ipd90p03p4l04atma1-etched.step/ipd90p03p4l04atma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipd90p03p4l04atma1.step/ipd90p03p4l04atma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
9e228f0819104df0, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IPD90P03P4L04ATMA1
**Infineon Technologies** · MOSFETs · TO-252
IPD90P03P4L04ATMA1 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin of the P-channel logic-level MOSFET; VGS rated +5/-16 V, threshold -1.0 to -2.0 V (typ. -1.5 V) at ID=-253µA. |
| 2 | D | passive | Drain pin, connected internally to the tab; VDS -30 V, continuous drain current -90 A at TC=25°C. |
| 3 | S | passive | Source pin of the P-channel MOSFET; RDS(on) max 4.1 mΩ at VGS=-10V, ID=-90A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current (TC=25°C) | ID | | | -90 | A | TC=25°C, VGS=-10V | 1 |
| Continuous drain current (TC=100°C) | ID | | | -90 | A | TC=100°C, VGS=-10V | 1 |
| Pulsed drain current | ID,pulse | | | -360 | A | TC=25°C | 1 |
| Avalanche energy, single pulse | EAS | | | 370 | mJ | ID=-45A | 1 |
| Avalanche current, single pulse | IAS | | | -90 | A | single pulse | 1 |
| Gate source voltage | VGS | -16 | | 5 | V | | 1 |
| Power dissipation | Ptot | | | 137 | W | TC=25 °C | 1 |
| Operating and storage temperature | Tj, Tstg | -55 | | 175 | °C | | 1 |
| Thermal resistance, junction - case | RthJC | | | 1.1 | K/W | | 2 |
| Thermal resistance, junction - ambient, SMD on PCB, minimal footprint | RthJA | | | 62 | K/W | SMD version, device on PCB, minimal footprint | 2 |
| Thermal resistance, junction - ambient, SMD on PCB, 6 cm2 cooling area | RthJA | | | 40 | K/W | SMD version, device on PCB, 6 cm2 cooling area | 2 |
| Drain-source breakdown voltage | V(BR)DSS | -30 | | | V | VGS=0V, ID=-1mA | 2 |
| Gate threshold voltage | VGS(th) | -1 | -1.5 | -2 | V | VDS=VGS, ID=-253µA | 2 |
| Zero gate voltage drain current (Tj=25°C) | IDSS | | -0.05 | -1 | µA | VDS=-24V, VGS=0V, Tj=25°C | 2 |
| Zero gate voltage drain current (Tj=125°C) | IDSS | | -20 | -200 | µA | VDS=-24V, VGS=0V, Tj=125°C | 2 |
| Gate-source leakage current | IGSS | | | -100 | nA | VGS=-16V, VDS=0V | 2 |
| Drain-source on-state resistance (VGS=-4.5V) | RDS(on) | | 5.1 | 6.8 | mΩ | VGS=-4.5V, ID=-90A | 2 |
| Drain-source on-state resistance (VGS=-10V) | RDS(on) | | 3.3 | 4.1 | mΩ | VGS=-10V, ID=-90A | 2 |
| Input capacitance | Ciss | | 8670 | 11300 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 |
| Output capacitance | Coss | | 2350 | 3050 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 |
| Reverse transfer capacitance | Crss | | 65 | 130 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 |
| Gate to source charge | Qgs | | 29 | 38 | nC | VDD=-24V, ID=-90A, VGS=0 to -10V | 3 |
| Gate to drain charge | Qgd | | 15 | 30 | nC | VDD=-24V, ID=-90A, VGS=0 to -10V | 3 |
| Gate charge total | Qg | | 125 | 160 | nC | VDD=-24V, ID=-90A, VGS=0 to -10V | 3 |
| Diode continuous forward current | IS | | | -90 | A | | 3 |
| Diode pulse current | IS,pulse | | | -360 | A | | 3 |
| Diode forward voltage | VSD | | | -1.3 | V | VGS=0V, IF=-90A, Tj=25°C | 3 |
## CAD (KiCad official)
- Symbol: `IPD90P03P4L04ATMA1`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `ipd90p03p4l04atma1-etched.step` / `ipd90p03p4l04atma1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipd90p03p4l04atma1.step` / `ipd90p03p4l04atma1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586205514192080896) (9 pp, sha256 `9e228f0819104df0`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ipd90p03p4l04atma1-datasheet.pdf)