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IPD90N06S404ATMA2

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Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPD90N06S404ATMA2

Infineon Technologies · MOSFETs · TO-252

IPD90N06S404ATMA2 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate pin; gate-source voltage limited to ±20 V with a typical threshold of 3.0 V (2.0 to 4.0 V at ID=90 µA).
2 D passive Drain pin, connected internally to the tab; 60 V VDS rating and 90 A continuous drain current at TC=25°C.
3 S passive Source pin; carries up to 90 A continuous current (diode continuous forward current also 90 A).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 90 A TC=25°C, VGS=10V 1
Pulsed drain current ID,pulse 360 A TC=25°C 1
Avalanche energy, single pulse EAS 331 mJ ID=45A 1
Avalanche current, single pulse IAS 90 A single pulse 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 150 W TC=25°C 1
Operating and storage temperature Tj, Tstg -55 175 °C 1
Thermal resistance, junction - case RthJC 1 K/W 2
Thermal resistance, junction - ambient, leaded RthJA 62 K/W 2
Thermal resistance, junction - ambient, SMD version, device on PCB, minimal footprint RthJA 62 K/W device on PCB, minimal footprint 2
Thermal resistance, junction - ambient, SMD version, device on PCB, 6 cm2 cooling area RthJA 40 K/W device on PCB, 6 cm2 cooling area 2
Drain-source breakdown voltage V(BR)DSS 60 V VGS=0V, ID=1mA 2
Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS, ID=90µA 2
Zero gate voltage drain current IDSS 0.03 1 µA VDS=60V, VGS=0V, Tj=25°C 2
Zero gate voltage drain current IDSS 10 100 µA VDS=60V, VGS=0V, Tj=125°C 2
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V 2
Drain-source on-state resistance RDS(on) 3.2 3.8 mΩ VGS=10V, ID=90A 2
Input capacitance Ciss 7980 10400 pF VGS=0V, VDS=25V, f=1MHz 3
Output capacitance Coss 1960 2540 pF VGS=0V, VDS=25V, f=1MHz 3
Reverse transfer capacitance Crss 75 150 pF VGS=0V, VDS=25V, f=1MHz 3
Gate to source charge Qgs 44 57 nC VDD=48V, ID=90A, VGS=0 to 10V 3
Gate to drain charge Qgd 10 20 nC VDD=48V, ID=90A, VGS=0 to 10V 3
Gate charge total Qg 99 128 nC VDD=48V, ID=90A, VGS=0 to 10V 3
Diode continuous forward current IS 90 A 3
Diode pulse current IS,pulse 360 A 3
Diode forward voltage VSD 0.6 0.95 1.3 V VGS=0V, IF=90A, Tj=25°C 3
Turn-on delay time td(on) 30 ns VDD=30V, VGS=10V, ID=90A, RG=3.5Ω 3
Rise time tr 70 ns VDD=30V, VGS=10V, ID=90A, RG=3.5Ω 3
Turn-off delay time td(off) 40 ns VDD=30V, VGS=10V, ID=90A, RG=3.5Ω 3
Fall time tf 5 ns VDD=30V, VGS=10V, ID=90A, RG=3.5Ω 3
Gate plateau voltage Vplateau 5.4 V VDD=48V, ID=90A, VGS=0 to 10V 3
Reverse recovery time trr 125 ns VR=30V, IF=50A, diF/dt=100A/µs 3
Reverse recovery charge Qrr 110 nC VR=30V, IF=50A, diF/dt=100A/µs 3

CAD (KiCad official)

  • Symbol: IPD90N06S404ATMA2
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ipd90n06s404atma2-etched.step / ipd90n06s404atma2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd90n06s404atma2.step / ipd90n06s404atma2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 a87a35436e4e74e6, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF