# IPD90N03S4L-03-HXY

**HXY MOSFET** · MOSFETs · TO-252-2L

IPD90N03S4L-03-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET; gate-source voltage is rated ±20 V (VGS). |
| 2 | D | passive | Drain terminal; drain-source voltage is rated 30 V (VDS) and continuous drain current is 160 A at TC=25℃ (VGS @ 10V). |
| 3 | S | passive | Source terminal; continuous source current of the integral body diode is rated 110 A (IS). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID@TC=25℃ |  |  | 160 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=100℃ |  |  | 80 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 450 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 580 | mJ |  | 1 |
| Avalanche Current | IAS |  |  | 60 | A |  | 1 |
| Total Power Dissipation | PD@TC=25℃ |  |  | 87 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 62 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 2.1 | ℃/W |  | 1 |
| Drain to source breakdown voltage | BVDSS | 30 |  |  | V | VGS=0V, ID=250uA | 2 |
| Drain to source leakage current | IDSS |  |  | 1 | uA | VDS=30V, VGS=0V | 2 |
| Drain to source leakage current | IDSS |  |  | 50 | uA | VDS=24V, TJ=125oC | 2 |
| Gate to source leakage current, forward | IGSS |  |  | 100 | nA | VGS=20V, VDS=0V | 2 |
| Gate to source leakage current, reverse | IGSS |  |  | -100 | nA | VGS=-20V, VDS=0V | 2 |
| Gate threshold voltage | VGS(TH) | 1.2 |  | 2.4 | V | VDS=VGS, ID=250uA | 2 |
| Drain to source on state resistance | RDS(ON) |  | 2.2 | 4.8 | mΩ | VGS=4.5V, ID=30A,TJ=25oC | 2 |
| Continuous source current | IS |  |  | 110 | A | Integral reverse p-n Junction diode in the MOSFET | 2 |
| Pulsed source current | ISM |  |  | 440 | A |  | 2 |
| Diode forward voltage drop | VSD |  |  | 1.4 | V | IS=45A, VGS=0V | 2 |

## CAD (KiCad official)

- Symbol: `IPD90N03S4L-03-HXY`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `ipd90n03s4l-03-hxy-etched.step` / `ipd90n03s4l-03-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipd90n03s4l-03-hxy.step` / `ipd90n03s4l-03-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/ipd90n03s4l-03-hxy-datasheet.pdf) (7 pp, sha256 `3b46ce687f3c43ce`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ipd90n03s4l-03-hxy-datasheet.pdf)