component
IPD75N04S4-06
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ipd75n04s4-06: specified limits as data (metadata.characteristics, 27 rows from the datasheet)
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+366−1
README.md+34@@ -21,6 +21,40 @@ IPD75N04S4-06 from Infineon Technologies, in a TO-252. Pinout and pin descriptio | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source breakdown voltage | V(BR)DSS | 40 | | | V | VGS=0V, ID=1mA | 2 |+| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=26µA | 2 |+| Zero gate voltage drain current | IDSS | | 0.015 | 1 | µA | VDS=40V, VGS=0V, Tj=25°C | 2 |+| Zero gate voltage drain current | IDSS | | 1 | 20 | µA | VDS=18V, VGS=0V, Tj=85°C (footnote 2) | 2 |+| Gate-source leakage current | IGSS | | | 100 | nA | VGS=20V, VDS=0V | 2 |+| Drain-source on-state resistance | RDS(on) | | 5 | 5.9 | mΩ | VGS=10V, ID=75A | 2 |+| Input capacitance | Ciss | | 1960 | 2550 | pF | VGS=0V, VDS=25V, f=1MHz | 3 |+| Output capacitance | Coss | | 490 | 640 | pF | VGS=0V, VDS=25V, f=1MHz | 3 |+| Reverse transfer capacitance | Crss | | 15 | 35 | pF | VGS=0V, VDS=25V, f=1MHz | 3 |+| Gate to source charge | Qgs | | 11.7 | 15.2 | nC | VDD=32V, ID=75A, VGS=0 to 10V | 3 |+| Gate to drain charge | Qgd | | 3.5 | 8.1 | nC | VDD=32V, ID=75A, VGS=0 to 10V | 3 |+| Gate charge total | Qg | | 24.5 | 32 | nC | VDD=32V, ID=75A, VGS=0 to 10V | 3 |+| Diode continuous forward current | IS | | | 75 | A | | 3 |+| Diode pulse current | IS,pulse | | | 300 | A | | 3 |+| Diode forward voltage | VSD | | 0.9 | 1.3 | V | VGS=0V, IF=75A, Tj=25°C | 3 |+| Continuous drain current | ID | | | 75 | A | TC=25°C, VGS=10V | 1 |+| Continuous drain current | ID | | | 53 | A | TC=100°C, VGS=10V | 1 |+| Pulsed drain current | ID,pulse | | | 300 | A | TC=25°C | 1 |+| Avalanche energy, single pulse | EAS | | | 72 | mJ | ID=35A | 1 |+| Avalanche current, single pulse | IAS | | | 75 | A | | 1 |+| Gate source voltage | VGS | -20 | | 20 | V | | 1 |+| Power dissipation | Ptot | | | 58 | W | TC=25°C | 1 |+| Operating and storage temperature | Tj, Tstg | -55 | | 175 | °C | | 1 |+| Thermal resistance, junction - case | RthJC | | | 2.6 | K/W | | 2 |+| Thermal resistance, junction - ambient, leaded | RthJA | | | 62 | K/W | leaded | 2 |+| Thermal resistance, junction - ambient, SMD version, minimal footprint | RthJA | | | 62 | K/W | SMD version, device on PCB, minimal footprint | 2 |+| Thermal resistance, junction - ambient, SMD version, 6 cm2 cooling area | RthJA | | | 40 | K/W | SMD version, device on PCB, 6 cm2 cooling area (footnote 2) | 2 |+ ## CAD (KiCad official) - Symbol: `IPD75N04S4-06`
page.json+332−1@@ -150,6 +150,337 @@ "Package": "TO-252", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "263a738580a1f261",+ "rows": [+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=1mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": 3,+ "max": 4,+ "conditions": "VDS=VGS, ID=26µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.015,+ "max": 1,+ "conditions": "VDS=40V, VGS=0V, Tj=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 1,+ "max": 20,+ "conditions": "VDS=18V, VGS=0V, Tj=85°C (footnote 2)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS=20V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 5,+ "max": 5.9,+ "conditions": "VGS=10V, ID=75A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 1960,+ "max": 2550,+ "conditions": "VGS=0V, VDS=25V, f=1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 490,+ "max": 640,+ "conditions": "VGS=0V, VDS=25V, f=1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 15,+ "max": 35,+ "conditions": "VGS=0V, VDS=25V, f=1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate to source charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 11.7,+ "max": 15.2,+ "conditions": "VDD=32V, ID=75A, VGS=0 to 10V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate to drain charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 3.5,+ "max": 8.1,+ "conditions": "VDD=32V, ID=75A, VGS=0 to 10V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate charge total",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 24.5,+ "max": 32,+ "conditions": "VDD=32V, ID=75A, VGS=0 to 10V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode continuous forward current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 75,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode pulse current",+ "symbol": "IS,pulse",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.9,+ "max": 1.3,+ "conditions": "VGS=0V, IF=75A, Tj=25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 75,+ "conditions": "TC=25°C, VGS=10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 53,+ "conditions": "TC=100°C, VGS=10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "ID,pulse",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "TC=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy, single pulse",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 72,+ "conditions": "ID=35A",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche current, single pulse",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 75,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 58,+ "conditions": "TC=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating and storage temperature",+ "symbol": "Tj, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - case",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 2.6,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - ambient, leaded",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 62,+ "conditions": "leaded",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - ambient, SMD version, minimal footprint",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 62,+ "conditions": "SMD version, device on PCB, minimal footprint",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - ambient, SMD version, 6 cm2 cooling area",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "SMD version, device on PCB, 6 cm2 cooling area (footnote 2)",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +522,4 @@ "visibility": { "public": true }-}+}