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Contents

README

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IPD75N04S4-06

Infineon Technologies · MOSFETs · TO-252

IPD75N04S4-06 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control input of the N-channel MOSFET, limited to ±20 V gate-source voltage with a 2.0 to 4.0 V threshold at 26 µA.
2 Drain passive Drain terminal, also connected to the tab, rated for 40 V drain-source voltage and 75 A continuous current at TC=25°C.
3 Source passive Source terminal of the N-channel MOSFET carrying up to 75 A continuous current at TC=25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 40 V VGS=0V, ID=1mA 2
Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS, ID=26µA 2
Zero gate voltage drain current IDSS 0.015 1 µA VDS=40V, VGS=0V, Tj=25°C 2
Zero gate voltage drain current IDSS 1 20 µA VDS=18V, VGS=0V, Tj=85°C (footnote 2) 2
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V 2
Drain-source on-state resistance RDS(on) 5 5.9 mΩ VGS=10V, ID=75A 2
Input capacitance Ciss 1960 2550 pF VGS=0V, VDS=25V, f=1MHz 3
Output capacitance Coss 490 640 pF VGS=0V, VDS=25V, f=1MHz 3
Reverse transfer capacitance Crss 15 35 pF VGS=0V, VDS=25V, f=1MHz 3
Gate to source charge Qgs 11.7 15.2 nC VDD=32V, ID=75A, VGS=0 to 10V 3
Gate to drain charge Qgd 3.5 8.1 nC VDD=32V, ID=75A, VGS=0 to 10V 3
Gate charge total Qg 24.5 32 nC VDD=32V, ID=75A, VGS=0 to 10V 3
Diode continuous forward current IS 75 A 3
Diode pulse current IS,pulse 300 A 3
Diode forward voltage VSD 0.9 1.3 V VGS=0V, IF=75A, Tj=25°C 3
Continuous drain current ID 75 A TC=25°C, VGS=10V 1
Continuous drain current ID 53 A TC=100°C, VGS=10V 1
Pulsed drain current ID,pulse 300 A TC=25°C 1
Avalanche energy, single pulse EAS 72 mJ ID=35A 1
Avalanche current, single pulse IAS 75 A 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 58 W TC=25°C 1
Operating and storage temperature Tj, Tstg -55 175 °C 1
Thermal resistance, junction - case RthJC 2.6 K/W 2
Thermal resistance, junction - ambient, leaded RthJA 62 K/W leaded 2
Thermal resistance, junction - ambient, SMD version, minimal footprint RthJA 62 K/W SMD version, device on PCB, minimal footprint 2
Thermal resistance, junction - ambient, SMD version, 6 cm2 cooling area RthJA 40 K/W SMD version, device on PCB, 6 cm2 cooling area (footnote 2) 2

CAD (KiCad official)

  • Symbol: IPD75N04S4-06
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ipd75n04s4-06-etched.step / ipd75n04s4-06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd75n04s4-06.step / ipd75n04s4-06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 263a738580a1f261, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF