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Contents

README

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IPD70R900P7S

Infineon Technologies · MOSFETs · TO-252

IPD70R900P7S from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate pin of the MOSFET; the datasheet limits gate-source voltage VGS to -16 V to 16 V static and -30 V to 30 V for AC (f>1 Hz).
2 Drain passive Drain pin of the MOSFET, also connected to the tab; the datasheet rates drain-source breakdown voltage V(BR)DSS at a minimum of 700 V and continuous drain current ID at 6 A (TC = 20°C) and 3.5 A (TC = 100°C).
3 Source passive Source pin of the MOSFET; the datasheet specifies continuous diode forward current IS of up to 4.1 A at TC = 25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current (TC = 20°C) ID 6 A TC = 20°C 3
Continuous drain current (TC = 100°C) ID 3.5 A TC = 100°C 3
Pulsed drain current ID,pulse 12.8 A TC=25°C 3
Avalanche current, single pulse IAS 3.6 A Application (Flyback) relevant; measured with standard leakage inductance of transformer of 5µH 3
MOSFET dv/dt ruggedness dv/dt 100 V/ns VDS=0...400V 3
Gate source voltage (static) VGS -16 16 V static 3
Gate source voltage (AC) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation Ptot 30.5 W TC=25°C 3
Operating and storage temperature Tj,Tstg -40 150 °C 3
Continuous diode forward current IS 4.1 A TC=25°C 3
Diode pulse current IS,pulse 12.8 A TC = 25°C 3
Reverse diode dv/dt dv/dt 1 V/ns VDS=0...400V, ISD<=IS, Tj=25°C 3
Maximum diode commutation speed dif/dt 50 A/µs VDS=0...400V, ISD<=IS, Tj=25°C 3
Thermal resistance, junction - case RthJC 4.1 °C/W 3
Thermal resistance, junction - ambient RthJA 62 °C/W Device on PCB, minimal footprint 3
Thermal resistance, junction - ambient for SMD version RthJA 35 45 °C/W Device on 40mm40mm1.5 epoxy PCB FR4 with 6cm2 (one layer 70µm thickness) copper area for drain connection and cooling; PCB vertical without air stream cooling 3
Soldering temperature, wave- & reflow soldering allowed Tsold 260 °C reflow MSL3 3
Drain-source breakdown voltage V(BR)DSS 700 V VGS=0V, ID=1mA 4
Gate threshold voltage V(GS)th 2.5 3 3.5 V VDS=VGS, ID=0.06mA 4
Zero gate voltage drain current (Tj = 25°C) IDSS 10 µA VDS=700V, VGS=0V, Tj=25°C 4
Gate-source leakage current incl. Zener diode IGSS 1 µA VGS=20V, VDS=0V 4
Drain-source on-state resistance (Tj = 25°C) RDS(on) 0.74 0.9 Ω VGS=10V, ID=1.1A, Tj=25°C 4

CAD (KiCad official)

  • Symbol: IPD70R900P7S
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ipd70r900p7s-etched.step / ipd70r900p7s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd70r900p7s.step / ipd70r900p7s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (13 pp, sha256 f484b1b840e0bfa3, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF