component
IPD70R360P7S
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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| viewers | 8d ago |
| ipd70r360p7s-etched.glb | 8d ago |
| ipd70r360p7s-etched.step | 8d ago |
| ipd70r360p7s-hero.glb | 8d ago |
| ipd70r360p7s-hero.overlay.json | 8d ago |
| ipd70r360p7s.glb | 8d ago |
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| ipd70r360p7s.lbr | 8d ago |
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IPD70R360P7S
Infineon Technologies · MOSFETs · TO-252
IPD70R360P7S from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate; gate-source voltage is limited to -16 V to 16 V static and -30 V to 30 V for AC (f > 1 Hz). |
| 2 | Drain | passive | MOSFET drain, internally connected to the tab; drain-source breakdown voltage is 700 V minimum (VGS = 0 V, ID = 1 mA) and continuous drain current is 12.5 A at TC = 20 °C. |
| 3 | Source | passive | MOSFET source; continuous diode forward current is 8.5 A at TC = 25 °C, with operating and storage temperature from -40 °C to 150 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 12.5 | A | TC = 20°C | 3 | ||
| Continuous drain current | ID | 7.5 | A | TC = 100°C | 3 | ||
| Pulsed drain current | ID,pulse | 34 | A | TC=25°C | 3 | ||
| Avalanche current, single pulse | IAS | 4.5 | A | Application (Flyback) relevant; measured with standard leakage inductance of transformer of 10µH | 3 | ||
| MOSFET dv/dt ruggedness | dv/dt | 100 | V/ns | VDS=0...400V | 3 | ||
| Gate source voltage (static) | VGS | -16 | 16 | V | static | 3 | |
| Gate source voltage (AC) | VGS | -30 | 30 | V | AC (f>1 Hz) | 3 | |
| Power dissipation | Ptot | 59.5 | W | TC=25°C | 3 | ||
| Operating and storage temperature | Tj,Tstg | -40 | 150 | °C | 3 | ||
| Continuous diode forward current | IS | 8.5 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | 34 | A | TC = 25°C | 3 | ||
| Reverse diode dv/dt | dv/dt | 1 | V/ns | VDS=0...400V, ISD<=IS, Tj=25°C | 3 | ||
| Maximum diode commutation speed | dif/dt | 50 | A/µs | VDS=0...400V, ISD<=IS, Tj=25°C | 3 | ||
| Thermal resistance, junction - case | RthJC | 2.1 | °C/W | 3 | |||
| Thermal resistance, junction - ambient | RthJA | 62 | °C/W | Device on PCB, minimal footprint | 3 | ||
| Thermal resistance, junction - ambient for SMD version | RthJA | 35 | 45 | °C/W | Device on 40mm40mm1.5 epoxy PCB FR4 with 6cm2 copper area for drain connection and cooling; PCB vertical without air stream cooling | 3 | |
| Soldering temperature, wave- & reflow soldering allowed | Tsold | 260 | °C | reflow MSL3 | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 700 | V | VGS=0V, ID=1mA | 4 | ||
| Gate threshold voltage | V(GS)th | 2.5 | 3 | 3.5 | V | VDS=VGS, ID=0.15mA | 4 |
| Zero gate voltage drain current | IDSS | 10 | µA | VDS=700V, VGS=0V, Tj=25°C | 4 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=700V, VGS=0V, Tj=150°C | 4 | ||
| Gate-source leakage current incl. Zener diode | IGSS | 1 | µA | VGS=20V, VDS=0V | 4 | ||
| Drain-source on-state resistance | RDS(on) | 0.3 | 0.36 | Ω | VGS=10V, ID=3A, Tj=25°C | 4 |
CAD (KiCad official)
- Symbol:
IPD70R360P7S - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ipd70r360p7s-etched.step/ipd70r360p7s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipd70r360p7s.step/ipd70r360p7s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (13 pp, sha256
2f379d819d95c869, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).