component
IPD60R600C6-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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IPD60R600C6-VB
VBsemi Elec · MOSFETs · TO-252
IPD60R600C6-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, rated for a maximum gate-source voltage of ±30 V with a threshold of 2 to 4 V. |
| 2 | D | passive | Drain of the N-channel MOSFET (also connected to the case/tab), rated for a drain-source voltage of 650 V. |
| 3 | S | passive | Source of the N-channel MOSFET, connected to the body diode anode and the return path of the drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 650 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -30 | 30 | V | TC = 25 °C | 1 | |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 300 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 63 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 0.6 | °C/W | 2 | |||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | 100 | nA | VGS = ± 20 V | 2 | ||
| Gate-Source Leakage | IGSS | 1 | μA | VGS = ± 30 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 600 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS = 520 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Diode Forward Voltage | VSD | 1.5 | V | TJ = 25 °C, IS = 4 A, VGS = 0 V | 2 | ||
| VDS Temperature Coefficient | ΔVDS/TJ | -0.65 | V/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Gate Input Resistance | Rg | 3.5 | Ω | f = 1 MHz, open drain | 2 | ||
| Reverse Recovery Time | trr | 190 | ns | TJ = 25 °C, IF = IS = 4 A, dI/dt = 100 A/μs, VR = 400 V | 2 | ||
| Reverse Recovery Charge | Qrr | 2.3 | μC | TJ = 25 °C, IF = IS = 4 A, dI/dt = 100 A/μs, VR = 400 V | 2 |
CAD (KiCad official)
- Symbol:
IPD60R600C6-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ipd60r600c6-vb-etched.step/ipd60r600c6-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipd60r600c6-vb.step/ipd60r600c6-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
9a431ba25f6ed474, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).