component
IPD60R400CE
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPD60R400CE
Infineon Technologies · MOSFETs · TO-252
IPD60R400CE from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the MOSFET; the datasheet limits gate-source voltage to ±20 V static and ±30 V dynamic (AC, f>1 Hz). |
| 2 | Drain | passive | Drain of the MOSFET, also connected to the tab; the device is rated for V(BR)DSS of 600 V minimum and 14.7 A continuous drain current at TC=25°C. |
| 3 | Source | passive | Source of the MOSFET, the reference terminal for the gate-source voltage ratings (±20 V static, ±30 V dynamic). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current (TC=25°C) | ID | 14.7 | A | TC=25°C | 3 | ||
| Continuous drain current (TC=100°C) | ID | 9.3 | A | TC=100°C | 3 | ||
| Pulsed drain current | ID,pulse | 30 | A | TC=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 210 | mJ | ID=1.8A; VDD=50V; see table 11 | 3 | ||
| Avalanche energy, repetitive | EAR | 0.32 | mJ | ID=1.8A; VDD=50V; see table 11 | 3 | ||
| Avalanche current, repetitive | IAR | 1.8 | A | 3 | |||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0...480V | 3 | ||
| Gate source voltage (static) | VGS | -20 | 20 | V | static | 3 | |
| Gate source voltage (dynamic) | VGS | -30 | 30 | V | AC (f>1 Hz) | 3 | |
| Power dissipation (TO-252, TO-251) | Ptot | 112 | W | TC=25°C | 3 | ||
| Storage temperature | Tstg | -40 | 150 | °C | 3 | ||
| Operating junction temperature | Tj | -40 | 150 | °C | 3 | ||
| Continuous diode forward current | IS | 10.4 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | 30 | A | TC=25°C | 3 | ||
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0...400V,ISD<=IS,Tj=25°C | 3 | ||
| Maximum diode commutation speed | dif/dt | 500 | A/µs | VDS=0...400V,ISD<=IS,Tj=25°C | 3 | ||
| Thermal resistance, junction - case | RthJC | 1.12 | °C/W | 4 | |||
| Thermal resistance, junction - ambient | RthJA | 62 | °C/W | device on PCB, minimal footprint | 4 | ||
| Thermal resistance, junction - ambient (SMD version) | RthJA | 35 | 45 | °C/W | Device on 40mm40mm1.5mm epoxy PCB FR4, 6cm² copper (one layer, 70µm), vertical, no air stream cooling | 4 | |
| Soldering temperature, wave & reflow | Tsold | 260 | °C | reflow MSL3 | 4 | ||
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | VGS=0V,ID=0.25mA | 5 | ||
| Gate threshold voltage | V(GS)th | 2.5 | 3 | 3.5 | V | VDS=VGS,ID=0.3mA | 5 |
| Zero gate voltage drain current (Tj=25°C) | IDSS | 10 | µA | VDS=600,VGS=0V,Tj=25°C | 5 | ||
| Zero gate voltage drain current (Tj=150°C) | IDSS | 1 | µA | VDS=600,VGS=0V,Tj=150°C | 5 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V,VDS=0V | 5 | ||
| Drain-source on-state resistance (Tj=25°C) | RDS(on) | 0.34 | 0.4 | Ω | VGS=10V,ID=3.8A,Tj=25°C | 5 | |
| Drain-source on-state resistance (Tj=150°C) | RDS(on) | 0.89 | Ω | VGS=10V,ID=3.8A,Tj=150°C | 5 |
CAD (KiCad official)
- Symbol:
IPD60R400CE - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ipd60r400ce-etched.step/ipd60r400ce-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipd60r400ce.step/ipd60r400ce.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (17 pp, sha256
560b61bbea22b44c, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).