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Ray Publish 0.1.0 d668b52 9d ago

IPD60R180CM8XTMA1

Infineon Technologies · MOSFETs · DPAK

IPD60R180CM8XTMA1 from Infineon Technologies, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate is the MOSFET control terminal; the datasheet limits gate-source voltage to -20 V to 20 V static and -30 V to 30 V dynamic (AC, f>1 Hz).
2 Drain passive Drain is the main power terminal, electrically connected to the tab, and the device is rated for V(BR)DSS of 600 V minimum with 18 A continuous drain current at TC=25°C.
3 Source passive Source is the main power return terminal, and the internal body diode (CFD) conducts between drain and source, with continuous diode forward current rated at 18 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package DPAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current (TC=25°C) ID 18 A TC=25°C 3
Continuous drain current (TC=100°C) ID 11 A TC=100°C 3
Pulsed drain current ID,pulse 48 A TC=25°C 3
Avalanche energy, single pulse EAS 28 mJ ID=2.7A; VDD=50V; see table 10 3
Avalanche energy, repetitive EAR 0.14 mJ ID=2.7A; VDD=50V; see table 10 3
Avalanche current, single pulse IAS 2.7 A 3
MOSFET dv/dt ruggedness dv/dt 120 V/ns VDS=0...400V 3
Gate source voltage (static) VGS -20 20 V static 3
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation Ptot 127 W TC=25°C 3
Storage temperature Tstg -55 150 °C 3
Operating junction temperature Tj -55 150 °C 3
Extended operating junction temperature Tj 150 175 °C ≤50 h in the application lifetime 3
Continuous diode forward current IS 18 A TC=25°C 3
Diode pulse current IS,pulse 48 A TC=25°C 3
Reverse diode dv/dt dv/dt 70 V/ns VDS=0...400V, ISD≤18A, Tj=25°C 3
Maximum diode commutation speed diF/dt 1300 A/µs VDS=0...400V, ISD≤18A, Tj=25°C 3
Thermal resistance, junction - case RthJC 0.98 K/W 4
Thermal resistance, junction - ambient RthJA 62 K/W device on PCB, minimal footprint 4
Thermal resistance, junction - ambient, SMD version RthJA 35 45 K/W Device on 40mm40mm1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm) copper area for drain connection and cooling; PCB vertical without air stream cooling 4
Soldering temperature, wave & reflow Tsold 260 °C reflow MSL1 4
Drain-source breakdown voltage V(BR)DSS 600 V VGS=0V, ID=1mA 5
Gate threshold voltage V(GS)th 3.7 4.2 4.7 V VDS=VGS, ID=0.14mA 5
Gate-source leakage current IGSS 1.6 µA VGS=20V, VDS=0V 5
Drain-source on-state resistance (Tj=25°C) RDS(on) 0.15 0.18 Ω VGS=10V, ID=5.6A, Tj=25°C 5
Reverse recovery time trr 62 77 ns VR=400V, IF=2.8A, diF/dt=100A/µs; see table 8 6
Reverse recovery charge Qrr 0.18 0.27 µC VR=400V, IF=2.8A, diF/dt=100A/µs; see table 8 6

CAD (KiCad official)

  • Symbol: IPD60R180CM8XTMA1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: ipd60r180cm8xtma1-etched.step / ipd60r180cm8xtma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd60r180cm8xtma1.step / ipd60r180cm8xtma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 d49b70f582c0c3f0, retrieved 2026-10-29, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF